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Cyano-Substituted Oligo(p-phenylene vinylene) Single Crystals: A Promising Laser Material

机译：氰基取代的寡聚（对亚苯基亚乙烯基）单晶：有希望的激光材料

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摘要

Organic crystals that combine high charge-carrier mobility and excellent light-emission characteristics are expected to be of interest for light-emitting transistors and diodes, and may offer renewed hope for electrically pumped laser action. High-luminescence-efficiency cyano-substituted oligo(p-phenylene vinylene) (CN-DPDSB) crystals (η ≈95%) grown by the physical vapor transport method is reported here, with high mobilities (at =10~(-2) cm~2 V~(-1) s~(-1) order of magnitude) as measured by time-of-flight. The CN-DPDSB crystals have well-balanced bipolar carrier-transport characteristics (μ_(hole)≈2.5-5.5 x 10~(-2) cm~(-2) V~(-1) s~(-1);μ_(electron)≈0.9-1.3 x 10~(-2) cm~2 V~(-1) s~(-1)) and excellent optically pumped laser properties. The threshold for amplified spontaneous emission (ASE) is about 4.6 ,μJ per pulse (23 KW cm~(-2)), while the gain coefficient at the peak wavelength of ASE and the loss coefficient caused by scattering are ≈35 and ≈1.7 cm~(-1) respectively. This indicates that CN-DPDSB crystals are promising candidates for organic laser diodes.
机译：结合了高载流子迁移率和出色的发光特性的有机晶体有望成为发光晶体管和二极管的关注对象，并可能为电泵浦激光作用提供新的希望。此处报道了通过物理气相传输法生长的高发光效率的氰基取代的低聚对苯撑亚乙烯基（CN-DPDSB）晶体（η≈95％），具有高迁移率（在= 10〜（-2）通过飞行时间测量的cm〜2 V〜（-1）s〜（-1）数量级）。 CN-DPDSB晶体具有良好平衡的双极性载流子传输特性（μ_（hole）≈2.5-5.5x 10〜（-2）cm〜（-2）V〜（-1）s〜（-1）; （电子）≈0.9-1.3x 10〜（-2）cm〜2 V〜（-1）s〜（-1）），并且具有出色的光泵浦激光性能。自发发射（ASE）的阈值约为4.6μJ/脉冲（23 KW cm〜（-2）），而ASE峰值波长处的增益系数和散射引起的损耗系数分别约为≈35和≈1.7 cm〜（-1）。这表明CN-DPDSB晶体是有机激光二极管的有前途的候选者。

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  • 来源
    《Advanced Functional Materials》 |2011年第19期|p.3770-3777|共8页
  • 作者

    Huan Wang; Feng Li; Israel Ravia; Bingrong Cao; Yupeng Li; Vlad Medvedev; Hongbo Sun; Nir Tessler; Yuguang Ma;

  • 作者单位

    State Key Laboratory of Supramolecular Structure and Materials Jilin University 2699 Qianjin Avenue, Changchun 130012, P. R. China;

    rnState Key Laboratory of Supramolecular Structure and Materials Jilin University 2699 Qianjin Avenue, Changchun 130012, P. R. China;

    rnThe Zisapel Nano-Electronics Center Department of Electrical Engineering Technion-lsrael Institute of Technology Technion City, Haifa 32000, Israel;

    rnState Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering jilin University 2699 Qianjin Avenue, Changchun 130012, P. R. China;

    rnState Key Laboratory of Supramolecular Structure and Materials Jilin University 2699 Qianjin Avenue, Changchun 130012, P. R. China;

    rnThe Zisapel Nano-Electronics Center Department of Electrical Engineering Technion-lsrael Institute of Technology Technion City, Haifa 32000, Israel;

    rnState Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering jilin University 2699 Qianjin Avenue, Changchun 130012, P. R. China;

    rnThe Zisapel Nano-Electronics Center Department of Electrical Engineering Technion-lsrael Institute of Technology Technion City, Haifa 32000, Israel;

    rnState Key Laboratory of Supramolecular Structure and Materials Jilin University 2699 Qianjin Avenue, Changchun 130012, P. R. China;

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