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High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates

机译：刚性和柔性基板上的高性能集成式ZnO纳米线紫外线传感器

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摘要

Due to the large surface area-to-volume ratio and high quality crystal structure, single nanowire (NW)-based UV sensors exhibit very high on/off ratios between photoresponse current and dark current. Practical applications require a large-scale and low-cost integration, compatibility to flexible electronics, as well as reasonably high photoresponse current that can be detected without high-precision measurement systems. In this paper, NW-based UV sensors were fabricated in large-scale by integrating multiple NWs connected in parallel via the contact printing method. Linear scaling of the photoresponse current with the number of NWs is demonstrated. Integrated ZnO NW UV sensors were fabricated on rigid glass and flexible polyester (PET) substrates at the macroscopic scale. The flexible and rigid sensors performed comparably, exhibiting on/off current ratios approximately three orders of magnitude higher than sensors made from polycrystalline ZnO thin films. Under UV irradiance of 4.5 mW cm~(-2) and 3 V bias, photoresponse currents and on/off current ratios for the rigid and flexible UV sensors reached 12.22 mA and 82 000, and 14.1 mA and 120 000, respectively. This result suggests that lateral integration of semiconductor NWs is an effective approach to large-scale fabrication of flexible NW sensors that inherit the merits of single-NW-based systems with unaffected performance compared to using rigid substrate.
机译：由于具有大的表面积体积比和高质量的晶体结构，基于单纳米线（NW）的紫外线传感器在光响应电流和暗电流之间显示出非常高的开/关比。实际应用需要大规模且低成本的集成，与柔性电子产品的兼容性以及相当高的光响应电流，而无需高精度测量系统就可以检测到该光响应电流。在本文中，通过集成通过接触印刷方法并联连接的多个NW，大规模制造了基于NW的UV传感器。展示了光响应电流与NW数量的线性比例关系。集成的ZnO NW紫外线传感器是在刚性玻璃和柔性聚酯（PET）衬底上宏观制造的。柔性传感器和刚性传感器的性能相当，其开/关电流比比由多晶ZnO薄膜制成的传感器高大约三个数量级。在4.5 mW cm〜（-2）的UV辐射和3 V偏压下，刚性和柔性UV传感器的光响应电流和开/关电流比分别达到12.22 mA和82 000、14.1 mA和120000。该结果表明，半导体NW的横向集成是大规模制造柔性NW传感器的有效方法，与使用刚性基板相比，该柔性NW传感器继承了基于单NW的系统的优点，并且性能不受影响。

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  • 来源
    《Advanced Functional Materials》 |2011年第23期|p.4464-4469|共6页
  • 作者

    Suo Bai; Weiwei Wu; Yong Qin; Nuanyang Cui; Dylan J. Bayerl; Xudong Wang;

  • 作者单位

    Institute of Nanoscience and Nanotechnology Lanzhou University Gansu 730000, China;

    Institute of Nanoscience and Nanotechnology Lanzhou University Gansu 730000, China;

    Institute of Nanoscience and Nanotechnology Lanzhou University Gansu 730000, China;

    Institute of Nanoscience and Nanotechnology Lanzhou University Gansu 730000, China;

    Department of Materials Science and Engineering University of Wisconsin at Madison Madison, Wisconsin 53706, USA;

    Department of Materials Science and Engineering University of Wisconsin at Madison Madison, Wisconsin 53706, USA;

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