• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Exploiting Microphase-Separated Morphologies of Side-Chain Liquid Crystalline Polymer Networks for Triple Shape Memory Properties
【24h】

Exploiting Microphase-Separated Morphologies of Side-Chain Liquid Crystalline Polymer Networks for Triple Shape Memory Properties

机译：开发侧链液晶聚合物网络的微相分离形态以实现三重形状记忆特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report a new strategy to achieve triple shape memory properties by using side-chain liquid crystalline (SCLC) type random terpolymer networks (XL-TP-n), where n is the length of flexible methylene spacer (n = 5,10, and 15) to link backbone and mesogen. A lower glass transition temperature (T_g = T_(low)) and a higher liquid crystalline clearing temperature (T_ci = T_(high) of XL-TP-n serve as molecular switches to trigger a shape memory effect (SME). Two different triple shape creation procedures (TSCPs), thermomechanical treatments to obtain temporary shapes prior to the proceeding recovery step, are used to investigate the triple shape memory behavior of XL-TP-n. The discrete T_g and T_(cl) as well as unique microphase-separated morphologies (backbone-rich and mesogen-rich domains) within smectic layers of XL-TP-n enables triple shape memory properties. Motional decoupling between backbone-rich and mesogen-rich domains is also critical to determine the resulting macroscopic shape memory properties. Our strategy for obtaining triple shape memory properties will pave the way for exploiting a broad range of SCLC polymers to develop a new class of actively moving polymers.
机译：我们报告了一种通过使用侧链液晶（SCLC）型无规三元共聚物网络（XL-TP-n）实现三重形状记忆特性的新策略，其中n是柔性亚甲基间隔基的长度（n = 5,10，并且15）连接骨架和介晶。较低的玻璃化转变温度（T_g = T_（低））和较高的液晶清除温度（T_ci = T_（高）XL-TP-n可作为触发形状记忆效应（SME）的分子开关。形状创建程序（TSCP），热机械处理以在进行恢复步骤之前获得临时形状，用于研究XL-TP-n的三重形状记忆行为。离散T_g和T_（cl）以及独特的微相- XL-TP-n近晶层内分离的形态（富含主链和富含介素的域）可实现三重形状记忆特性，富含骨架和富含介素的域之间的运动解耦对于确定最终的宏观形状记忆特性也至关重要。我们获得三重形状记忆特性的策略将为开发各种SCLC聚合物以开发新型的主动移动聚合物铺平道路。

著录项

  • 来源
    《Advanced Functional Materials》 |2011年第23期|p.4543-4549|共7页
  • 作者

    Suk-kyun Ahn; Rajeswari M. Kasi;

  • 作者单位

    Polymer Program Institute of Materials Science University of Connecticut Storrs, CT, 06269, USA;

    Polymer Program Institute of Materials Science University of Connecticut Storrs, CT, 06269, USA Department of Chemistry University of Connecticut Storrs, CT, 06269, USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号