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机译:通过耦合到二维银阵列中的表面等离激元,增强了来自InGaN / GaN多量子阱的绿色发射。
Department of Materials Science and Engineering National Cheng Kung University Tainan 701, Taiwan, Center for Micro/Nano Science and Technology National Cheng Kung University Tainan 701, Taiwan Research Center for Energy Technology and Strategy National Cheng Kung University Tainan 701, Taiwan Advanced Optoelectronic Technology Center National Cheng Kung University Tainan 701, Taiwan;
Department of Materials Science and Engineering National Cheng Kung University Tainan 701, Taiwan, Center for Micro/Nano Science and Technology National Cheng Kung University Tainan 701, Taiwan Research Center for Energy Technology and Strategy National Cheng Kung University Tainan 701, Taiwan Advanced Optoelectronic Technology Center National Cheng Kung University Tainan 701, Taiwan;
Research Center,Genesis Photonics Incorporation, Tainan 741, Taiwan;
Research Center,Genesis Photonics Incorporation, Tainan 741, Taiwan;
Department of Materials Science and Engineering National Cheng Kung University Tainan 701, Taiwan, Center for Micro/Nano Science and Technology National Cheng Kung University Tainan 701, Taiwan Research Center for Energy Technology and Strategy National Cheng Kung University Tainan 701, Taiwan Advanced Optoelectronic Technology Center National Cheng Kung University Tainan 701, Taiwan;
机译:由于表面等离子体激元耦合,增强了规则排列的InGaN / GaN纳米柱在橙色和红色区域的发光效率和内部量子效率
机译:金纳米粒子的表面等离子体激元提高绿色InGaN / GaN多量子阱的发射效率
机译:InGaN / GaN量子阱中的量子限制斯塔克效应对其与表面等离激元耦合以增强发光的影响
机译:量子狭窄的效果在Ingan / GaN量子中的作用阱在其与光发射增强表面等离子体的耦合过程中
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:InGaN / GaN量子阱结构中的表面等离子体激元耦合动力学和辐射效率的提高
机译:通过表面等离子体耦合提高绿色发射GaInN / GaN多量子阱的内量子效率