• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Variable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors
【24h】

Variable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors

机译：n沟道，p沟道和双极性有机场效应晶体管的可变温度迁移率分析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The temperature dependence of field-effect transistor (FET) mobility is analyzed for a series of n-channel, p-channel, and ambipolar organic semiconductor-based FETs selected for varied semiconductor structural and device characteristics. The materials (and dominant carrier type) studied are 5,5'"-bis(perfluorophenacyl)-2,2':5',2":5",2'"-quaterthiophene (1, n-channel), 5,5"'-bis(perfluorohexyl carbonyl)-2,2':5',2":5 ",2'"-quaterthiophene (2, n-channel), pentacene (3, p-channel); 5,5'"-bis(hexylcarbonyl)-2,2':5',2":5",2'"-quaterthiophene (4, ambipolar), 5,5'"-bis-(phenacyl)-2,2': 5',2":5",2'"-quaterthiophene (5, p-channel), 2,7-bis((5-perfluorophenacyl)thiophen-2-yl)-9,10-phenanthrenequinone (6, n-channel), and poly(N-(2-octyldodecyl)-2,2'-bithiophene-3,3'-dicarboximide) (7, n-channel). Fits of the effective field-effect mobility (μ_(eff)) data assuming a discrete trap energy within a multiple trapping and release (MTR) model reveal low activation energies (E_As) for high-mobility semiconductors 1-3 of 21, 22, and 30 meV, respectively. Higher E_A values of 40-70 meV are exhibited by 4-7-derived FETs having lower mobilities (μ_(eff)). Analysis of these data reveals little correlation between the conduction state energy level and E_A, while there is an inverse relationship between E_A and μ_(eff). The first variable-temperature study of an ambipolar organic FET reveals that although n-channel behavior exhibits E_A = 27 meV, the p-channel regime exhibits significantly more trapping with E_A = 250 meV. Interestingly, calculated free carrier mobilities (μ_0) are in the range of ～0.2-0.8 cm~2 V~(-1) s~(-1) in this materials set, largely independent of μ_(eff). This indicates that in the absence of charge traps, the inherent magnitude of carrier mobility is comparable for each of these materials. Finally, the effect of temperature on threshold voltage (V_T) reveals two distinct trapping regimes, with the change in trapped charge exhibiting a striking correlation with room temperature μ_(eff). The observation that E_A is independent of conduction state energy, and that changes in trapped charge with temperature correlate with room temperature μ_(eff), support the applicability of trap-limited mobility models such as a MTR mechanism to this materials set.
机译：针对一系列n沟道，p沟道和基于双极性有机半导体的FET分析了场效应晶体管（FET）迁移率的温度依赖性，这些FET被选择用于各种半导体结构和器件特性。研究的材料（和主要的载体类型）是5,5'“-双（全氟苯酰基）-2,2'：5'，2”：5“，2'”-四噻吩（1，n-通道），5， 5″′-双（全氟己基羰基）-2，2′：5′，2″：5″，2′″-四噻吩（2，n-通道），并五苯（3，p-通道）； 5,5'“-双（己基羰基）-2,2'：5'，2”：5“，2'”-四噻吩（4，双极性），5,5'“-双-（苯甲酰基）-2， 2'：5'，2“：5”，2'“-四噻吩（5，p-通道），2,7-双（（5-全氟苯酰基）噻吩-2-基）-9,10-菲醌（6 ，n-通道）和聚（N-（2-辛基十二烷基）-2,2'-联噻吩-3,3'-二甲酰亚胺）（7，n-通道）。假设多重捕获和释放（MTR）模型中具有离散陷阱能量，则有效场效应迁移率（μ_（eff））数据的拟合显示出高迁移率半导体1-3（21、22，和30 meV。具有较低迁移率（μ_（eff））的4-7衍生的FET表现出40-70 meV的较高E_A值。对这些数据的分析表明，传导状态能级与E_A之间几乎没有相关性，而E_A与μ_（eff）之间存在反比关系。对双极性有机FET的首次可变温度研究表明，尽管n沟道行为表现出E_A = 27 meV，但p沟道态表现出的陷获明显更多于E_A = 250 meV。有趣的是，在该材料组中，计算出的自由载流子迁移率（μ_0）在〜0.2-0.8 cm〜2 V〜（-1）s〜（-1）的范围内，很大程度上与μ_（eff）无关。这表明在没有电荷陷阱的情况下，载流子迁移率的固有幅度对于这些材料中的每一种都是可比的。最后，温度对阈值电压（V_T）的影响揭示了两种截然不同的俘获机制，俘获电荷的变化与室温μ_（eff）表现出惊人的相关性。 E_A与传导态能量无关，且捕获的电荷随温度的变化与室温μ_（eff）相关的观察结果支持了陷阱受限的迁移率模型（如MTR机制）对该材料组的适用性。

著录项

  • 来源
    《Advanced Functional Materials》 |2010年第1期|50-58|共9页
  • 作者

    Joseph A. Letizia; Jonathan Rivnay; Antonio Facchetti; Mark A. Ratner; Tobin J. Marks;

  • 作者单位

    Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA);

    rnDepartment of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA);

    rnDepartment of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA);

    rnDepartment of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA);

    rnDepartment of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA);

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号