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首页> 外文期刊>Advanced Functional Materials >An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse
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An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse

机译：表现为生物尖峰突触的有机纳米粒子晶体管。

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摘要

Molecule-based devices are envisioned to complement silicon devices by providing new functions or by implementing existing functions at a simpler process level and lower cost, by virtue of their self-organization capabilities. Moreover, they are not bound to von Neuman architecture and this feature may open the way to other architectural paradigms. Neuromorphic electronics is one of them. Here, a device made of molecules and nanoparticles-a nanoparticle organic memory field-effect transistor (NOMFET)-that exhibits the main behavior of a biological spiking synapse is demonstrated. Facilitating and depressing synaptic behaviors can be reproduced by the NOMFET and can be programmed. The synaptic plasticity for real-time computing is evidenced and described by a simple model. These results open the way to rate-coding utilization of the NOMFET in dynamical neuromorphic computing circuits.
机译：基于分子的器件的自身组织能力，可以通过提供新功能或以更简单的工艺水平和更低的成本实现现有功能来补充硅器件。而且，它们不限于冯·诺伊曼（von Neuman）建筑，此功能可能会为其他建筑范式开辟道路。神经形态电子学就是其中之一。在这里，展示了一种由分子和纳米粒子组成的装置-纳米粒子有机存储场效应晶体管（NOMFET）-展现出生物突触突触的主要行为。促进和抑制突触行为可以由NOMFET进行复制并可以进行编程。实时计算的突触可塑性通过一个简单的模型得到证明和描述。这些结果为动态神经形态计算电路中NOMFET的速率编码利用开辟了道路。

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  • 来源
    《Advanced Functional Materials》 |2010年第2期|330-337|共8页
  • 作者

    Fabien Alibart; Stephane Pleutin; David Cuerin; Christophe Novembre; Stephane Lenfant; Kamal Lmimouni; Christian Gamrat; Dominique Vuillaume;

  • 作者单位

    Molecular Nanostructures and Devices group Institute for Electronics Microelectronics and Nanotechnology (IEMN) CNRS, University of Lille BP60069, avenue Poincare, F-59652 cedex, Villeneuve d'Ascq (France);

    Molecular Nanostructures and Devices group Institute for Electronics Microelectronics and Nanotechnology (IEMN) CNRS, University of Lille BP60069, avenue Poincare, F-59652 cedex, Villeneuve d'Ascq (France);

    Molecular Nanostructures and Devices group Institute for Electronics Microelectronics and Nanotechnology (IEMN) CNRS, University of Lille BP60069, avenue Poincare, F-59652 cedex, Villeneuve d'Ascq (France);

    CEA, LIST/LCE (Advanced Computer technologies and Architectures) Bat. 528, F-91191, Gif-sur-Yvette (France);

    Molecular Nanostructures and Devices group Institute for Electronics Microelectronics and Nanotechnology (IEMN) CNRS, University of Lille BP60069, avenue Poincare, F-59652 cedex, Villeneuve d'Ascq (France);

    Molecular Nanostructures and Devices group Institute for Electronics Microelectronics and Nanotechnology (IEMN) CNRS, University of Lille BP60069, avenue Poincare, F-59652 cedex, Villeneuve d'Ascq (France);

    CEA, LIST/LCE (Advanced Computer technologies and Architectures) Bat. 528, F-91191, Gif-sur-Yvette (France);

    Molecular Nanostructures and Devices group Institute for Electronics Microelectronics and Nanotechnology (IEMN) CNRS, University of Lille BP60069, avenue Poincare, F-59652 cedex, Villeneuve d'Ascq (France);

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