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首页> 外文期刊>Advanced Functional Materials >Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates
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Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

机译：整体水平ZnO纳米线超结构的生长和转移到柔性基板上

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摘要

A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order of ten thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators.
机译：演示了一种完全控制宽度和长度的水平排列的ZnO纳米线（NW）阵列的制造方法。通过透射电子显微镜的NW的横截面图显示了“蘑菇状”结构。通过利用横向过度生长来制造新颖的整体式多段上部结构。还展示了纵横比为一万数量级的超长水平ZnO NW。这些水平NW被提起并转移到柔性聚合物基板上，在基于ZnO NW的水平纳米传感器阵列，发光二极管，光栅，集成电路互连以及高输出功率交流电中可能具有许多重大应用纳米发电机。

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  • 来源
    《Advanced Functional Materials》 |2010年第9期|P.1493-1497|共5页
  • 作者

    Sheng Xu; Yue Shen; Yong Ding; Zhong Lin Wang;

  • 作者单位

    School of Materials Science and Engineering Georgia Institute of Technology 771 Ferst Drive, Atlanta, CA 30332 (USA);

    rnSchool of Materials Science and Engineering Georgia Institute of Technology 771 Ferst Drive, Atlanta, CA 30332 (USA) Department of Advanced Materials and Nanotechnology College of Engineering, Peking University Beijing 100871 (China);

    rnSchool of Materials Science and Engineering Georgia Institute of Technology 771 Ferst Drive, Atlanta, CA 30332 (USA);

    rnSchool of Materials Science and Engineering Georgia Institute of Technology 771 Ferst Drive, Atlanta, CA 30332 (USA);

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