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Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

机译:穿越界面:磁性复合氧化物异质结构中隧道电流的铁电控制

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摘要

Experimental results on entirely complex oxide ferromagnetic/ferroelectric/ ferromagnetic tunnel junctions are presented in which the tunneling magnetoresistance is modified by applying low electric field pulses to the junctions. The experiments indicate that ionic displacements associated with the polarization reversal in the ferroelectric barrier affect the complex band structure at ferromagnetic-ferroelectric interfaces. The results are discussed in the framework of the theoretically predicted magnetoelectric interface effect and may lead to novel multistate memory devices.
机译:提出了对完全复杂的氧化物铁磁/铁电/铁磁隧道结的实验结果,其中通过向结施加低电场脉冲来修改隧道磁阻。实验表明,与铁电势垒中的极化反转相关的离子位移会影响铁磁-铁电界面处的复带结构。在理论上预测的磁电界面效应的框架内讨论了结果,并且可能会导致新型的多态存储器件。

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  • 来源
    《Advanced Functional Materials》 |2010年第15期|P.2436-2441|共6页
  • 作者单位

    School of Materials Science & Engineering University of New South Wales Sydney NSW 2052 (Australia);

    rnNanoelektronik Technische Fakultaet Christian-Albrechts-Universitaet zu Kiel D-24143 Kiel (Germany);

    rnA. F. Ioffe Physico-Technical Institute Russian Academy of Sciences 194021 St. Petersburg (Russia);

    rnSchool of Materials Science & Engineering University of New South Wales Sydney NSW 2052 (Australia);

    rnSchool of Materials Science & Engineering University of New South Wales Sydney NSW 2052 (Australia);

    rnNanoelektronik Technische Fakultaet Christian-Albrechts-Universitaet zu Kiel D-24143 Kiel (Germany);

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