Self-Assembled In-Plane Growth of Mg_2SiO_4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

Zhou Zhang; rnLai Mun Wong; rnHou Xiao Wang; rnZhi Peng Wei; rnWei Zhou; rnShi Jie Wang; rnTom Wu

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Self-Assembled In-Plane Growth of Mg_2SiO_4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

机译：Au纳米粒子催化的Si衬底上Mg_2SiO_4纳米线的自组装平面生长

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In-plane growth of Mg_2SiO_4 nanowires on Si substrates is achieved by using a vapor transport method with Au nanoparticles as catalyst. The self-assembly of the as-grown nanowires shows dependence on the substrate orientation, i.e., they are along one, two, and three particular directions on Si (110), (100), and (111) substrates, respectively. Detailed electron microscopy studies suggest that the Si substrates participate in the formation of Mg_2SiO_4, and the epitaxial growth of the nanowires is confined along the Si < 110> directions. This synthesis route is quite reliable, and the dimensions of the Mg_2SiO_4 nanowires can be well controlled by the experiment parameters. Furthermore, using these nanowires, a lithography-free method is demonstrated to fabricate nanowalls on Si substrates by controlled chemical etching. The Au nanoparticle catalyzed in-plane epitaxial growth of the Mg_2SiO_4 nanowires hinges on the intimate interactions between substrates, nanoparticles, and nanowires, and our study may help to advance the developments of novel nanomaterials and functional nanodevices.

机译：通过以金纳米粒子为催化剂的气相传输方法，在Si衬底上实现了Mg_2SiO_4纳米线的面内生长。生长的纳米线的自组装显示出对衬底取向的依赖性，即，它们分别沿着Si（110），（100）和（111）衬底上的一个，两个和三个特定方向。详细的电子显微镜研究表明，硅衬底参与了Mg_2SiO_4的形成，并且纳米线的外延生长沿Si <110>方向受到限制。该合成路线是相当可靠的，并且Mg_2SiO_4纳米线的尺寸可以通过实验参数很好地控制。此外，使用这些纳米线，已证明采用无光刻法通过受控化学蚀刻在Si基板上制造纳米壁。 Au纳米颗粒催化的Mg_2SiO_4纳米线的面内外延生长取决于基底，纳米颗粒和纳米线之间的紧密相互作用，我们的研究可能有助于推进新型纳米材料和功能纳米器件的发展。

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来源
《Advanced Functional Materials》 |2010年第15期|P.2511-2518|共8页
作者
Zhou Zhang; rnLai Mun Wong; rnHou Xiao Wang; rnZhi Peng Wei; rnWei Zhou; rnShi Jie Wang; rnTom Wu;
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Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore);

rnInstitute of Materials Research and Engineering Singapore 117602 (Singapore);

rnDivision of Manufacturing Engineering School of Mechanical and Aerospace Engineering Nanyang Technological University, Singapore 639798 (Singapore);

rnDivision of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore);

rnDivision of Manufacturing Engineering School of Mechanical and Aerospace Engineering Nanyang Technological University, Singapore 639798 (Singapore);

rnInstitute of Materials Research and Engineering Singapore 117602 (Singapore);

rnDivision of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University, Singapore 637371 (Singapore);

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Self-Assembled In-Plane Growth of Mg_2SiO_4 Nanowires on Si Substrates Catalyzed by Au Nanoparticles

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