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首页> 外文期刊>Advanced Functional Materials >Air-Operable, High-Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain
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Air-Operable, High-Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

机译：具有半氟化侧链和未取代的萘四甲酸二酰亚胺核的空气可操作，高迁移率有机晶体管：全氟辛基丙基侧链的迁移率高，环境稳定，应力稳定

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N,N'-bis(3-(perfluoroctyl)propyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (8-3-NTCDI) was newly synthesized, as were related fluoroocty-lalkyl-NTCDIs and alkyl-NTCDIs. The 8-3-NTCDI-based organic thin-film transistor (OTFT) on an octadecyltrimethoxysilane (OTS)-treated Si/SiO_2 substrate shows apparent electron mobility approaching 0.7 cm~2 V~(-1)s~(-1) in air. The fluorooctylethyl-NTCDI (8-2-NTCDI) and fluorooctylbutyl-NTCDI (8-4-NTCDI) had significantly inferior properties even though their chemical structures are only slightly different, and nonfluorinated decyl and undecyl NTCDIs did not operate predictably in air. From atomic force microscopy, the 8-3-NTCDI active layer deposited with the substrate at 120 °C forms a polycrystalline film with grain sizes >4μm. Mobilities were stable in air for one week. After 100 days in air, the average mobility of three OTFTs decreased from 0.62 to 0.12 cm~2 V~(-1)s~(-1), but stabilized thereafter. The threshold voltage (V_T) increased by 15 V in air, but only by 3 V under nitrogen, after one week. On/off ratios were stable in air throughout. We also investigated transistor stability to gate bias stress. The transistor on hexamethlydisilazane (HMDS) is more stable than that on OTS with mobility comparable to amorphous Si TFTs. V_T shifts caused by ON (30 V) and OFF (-20 V) gate bias stress for the HMDS samples for 1 hour were 1.79 V and 1.27 V under N_2, respectively, and relaxation times of 10~6 and 10~7 s were obtained using the stretched exponential model. These performances are promising for use in transparent display backplanes.
机译：与相关的氟辛基-1-烷基-NTCDI和烷基-NTCDI一样，新合成了N，N′-双（3-（全氟代丙基）丙基）-1,4,5,8-萘四甲酸二酰亚胺（8-3-NTCDI）。在十八烷基三甲氧基硅烷（OTS）处理的Si / SiO_2衬底上，基于8-3-NTCDI的有机薄膜晶体管（OTFT）在表观电子迁移率接近0.7 cm〜2 V〜（-1）s〜（-1）。空气。尽管氟辛基乙基-NTCDI（8-2-NTCDI）和氟辛基丁基-NTCDI（8-4-NTCDI）的化学结构稍有不同，但它们的性能明显较差，并且非氟化癸基和十一烷基NTCDI在空气中无法正常运行。根据原子力显微镜，在120°C的温度下沉积在基板上的8-3-NTCDI活性层形成了晶粒尺寸>4μm的多晶膜。流动性在空气中稳定了一周。在空气中放置100天后，三个OTFT的平均迁移率从0.62降至0.12 cm〜2 V〜（-1）s〜（-1），但此后趋于稳定。一周后，空气中的阈值电压（V_T）增加了15 V，但在氮气下仅增加了3V。整个空气中的开/关比保持稳定。我们还研究了晶体管对栅极偏置应力的稳定性。六甲基二硅氮烷（HMDS）上的晶体管比OTS上的晶体管更稳定，迁移率可与非晶硅TFT媲美。在N_2下，HMDS样品在1小时内由ON（30 V）和OFF（-20 V）栅极偏置应力引起的V_T位移分别为1.79 V和1.27 V，弛豫时间为10〜6和10〜7 s。使用拉伸指数模型获得。这些性能有望用于透明显示器背板。

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  • 来源
    《Advanced Functional Materials》 |2010年第17期|P.2930-2944|共15页
  • 作者

    Byung Jun Jung; Kyusang Lee; Jia Sun; Andreas G. Andreou; Howard E. Katz;

  • 作者单位

    Department of Materials Science and Engineering Johns Hopkins University 3400 North Charles Street Baltimore, Maryland 21218;

    rnDepartment of Electrical and Computer Engineering Johns Hopkins University 3400 North Charles Street Baltimore, Maryland 21218;

    rnDepartment of Materials Science and Engineering Johns Hopkins University 3400 North Charles Street Baltimore, Maryland 21218;

    rnDepartment of Electrical and Computer Engineering Johns Hopkins University 3400 North Charles Street Baltimore, Maryland 21218;

    rnDepartment of Materials Science and Engineering Johns Hopkins University 3400 North Charles Street Baltimore, Maryland 21218;

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