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首页> 外文期刊>Advanced Functional Materials >High Fill Factor and Open Circuit Voltage in Organic Photovoltaic Cells with Diindenoperylene as Donor Material
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High Fill Factor and Open Circuit Voltage in Organic Photovoltaic Cells with Diindenoperylene as Donor Material

机译：以二茚杂戊烯为供体材料的有机光伏电池中的高填充因子和开路电压

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摘要

Small-molecule photovoltaic cells using diindenoperylene (DIP) as a new donor material in combination with the fullerene C_(60) as an electron acceptor are demonstrated. In addition to the successful application in planar and bulk heterojunction devices, a comprehensive analysis including structural studies, the determination of the energy level alignment and electrical transport investigations is given, stressing the correlation between growth conditions, film morphology, and device performance. Due to pronounced crystallinity and a large surface area of DIP films grown at elevated temperature, exceptionally high fill factors of almost 75% are achieved in planar heterojunction cells. Bulk heterojunctions exhibit large-scale phase separation forming a bicontinuous network of both molecular species, which enables efficient exciton dissociation and charge carrier transport. The high ionization potential of DIP and the favorable energy level alignment with the fullerene C_(60) yield large open circuit voltages close to 1 V and comparable power conversion efficiencies of about 4% in both cell architectures.
机译：展示了使用二茚并oper（DIP）作为新的供体材料并结合富勒烯C_（60）作为电子受体的小分子光伏电池。除了在平面和本体异质结器件中的成功应用外，还进行了包括结构研究，能级对准的确定和电传输研究的综合分析，强调了生长条件，薄膜形态和器件性能之间的相关性。由于在高温下生长的DIP薄膜具有明显的结晶度和较大的表面积，因此在平面异质结电池中可实现接近75％的极高填充率。本体异质结显示出大规模的相分离，形成了两个分子物种的双连续网络，这使得有效的激子离解和载流子传输成为可能。 DIP的高电离电势和与富勒烯C_（60）的有利能级对齐可在两种电池架构中产生接近1 V的大开路电压和相当的功率转换效率，约为4％。

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  • 来源
    《Advanced Functional Materials》 |2010年第24期|p.4295-4303|共9页
  • 作者

    Julia Wagner; Mark Gruber; Alexander Hinderhofer; Andreas Wilke; Benjamin Broker; Johannes Frisch; Patrick Amsalem; Antje Vollmer; Andreas Opitz; Norbert Koch; Frank Schreiber; Wolfgang Brutting;

  • 作者单位

    Institut fuer Physik Universitat Augsburg Universitatsstr. 1, 86135 Augsburg, Germany;

    Institut fuer Physik Universitat Augsburg Universitatsstr. 1, 86135 Augsburg, Germany;

    Institut fur Angewandte Physik Universitat Tubingen Auf der Morgenstelle 10, 72076 Tubingen, Germany;

    Institut fur Physik Humboldt-Universitat zu Berlin Newtonstr. 15, 12489 Berlin, Germany;

    Institut fur Physik Humboldt-Universitat zu Berlin Newtonstr. 15, 12489 Berlin, Germany;

    Institut fur Physik Humboldt-Universitat zu Berlin Newtonstr. 15, 12489 Berlin, Germany;

    Institut fur Physik Humboldt-Universitat zu Berlin Newtonstr. 15, 12489 Berlin, Germany;

    Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH-BESSYII Albert-Einstein-Straβe 15, 12489 Berlin, Germany;

    Institut fuer Physik Universitat Augsburg Universitatsstr. 1, 86135 Augsburg, Germany;

    Institut fur Physik Humboldt-Universitat zu Berlin Newtonstr. 15, 12489 Berlin, Germany;

    Institut fur Angewandte Physik Universitat Tubingen Auf der Morgenstelle 10, 72076 Tubingen, Germany;

    Institut fuer Physik Universitat Augsburg Universitatsstr. 1, 86135 Augsburg, Germany;

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