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Inverted Solution Processable OLEDs Using a Metal Oxide as an Electron Injection Contact

机译：使用金属氧化物作为电子注入触点的可逆溶液可加工OLED

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摘要

A new type of bottom-emission electroluminescent device is described in which a metal oxide is used as the electron-injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light-emitting layer and subsequently the deposition of a high-workfunction (air-stable) metal anode. This architecture allows for a low-cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m~(-2) is observed at voltages as low as 8V, demonstrating the potential of this new approach to organic light-emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole-injection layer in between the light-emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space-charge field over the metal-oxide-LEP interface due to the build up of holes in the LEP layer close to this interface.
机译：描述了一种新型的底部发射电致发光器件，其中金属氧化物用作电子注入触点。这种设备的准备很简单。它包括在覆有铟锡氧化物的玻璃基板上沉积一层金属氧化物的薄层，然后对发光层进行固溶处理，然后沉积高功函数（空气稳定的）金属阳极。由于不需要严格的封装，因此该架构允许使用低成本的电致发光器件。在低至8V的电压下观察到的高亮度电致发光达到5700 cd m〜（-2），证明了这种新方法对有机发光二极管（OLED）器件的潜力。不幸的是，由于流过器件的高电流密度，器件效率相当低。我们显示该设备仅在发光聚合物（LEP）和金属阳极之间插入了额外的空穴注入层之后才能工作。描述了解释实验结果并为进一步优化这些设备提供途径的简单模型。基于这样的思想，由于在LEP层中靠近该界面的空穴的堆积，通过在金属氧化物-LEP界面上形成空间电荷场，降低了电子注入的势垒。

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