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首页> 外文期刊>Advanced Functional Materials >Polarity Effects Of Polymer Gate Electrets On Non-volatile Organic Field-effect Transistor Memory
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Polarity Effects Of Polymer Gate Electrets On Non-volatile Organic Field-effect Transistor Memory

机译：聚合物栅极驻极体对非易失性有机场效应晶体管存储器的极性影响

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Organic non-volatile memory (ONVM) based on pentacene field-effect transistors (FETs) has been fabricated using various chargeable thin polymer gate dielectrics - termed electrets - onto silicon oxide insulating layers. The overall transfer curve of organic FETs is significantly shifted in both positive and negative directions and the shifts in threshold voltage (V_(Th)) can be systemically and reversibly controlled via relatively brief application of the appropriate external gate bias. The shifted transfer curve is stable for a relatively long time -more than 10~5 s. However, this significant reversible shift in V_(Th) is evident only in OFETs with non-polar and hydrophobic polymer electret layers. Moreover, the magnitude of the memory window in this device is inversely proportional to the hydrophilicity (determined from the water contact angle) and dielectric polarity (determined from the dielectric constant), respectively. Memory behaviors of ONVM originate from charge storage in polymer gate electret layers. Therefore, the small shifts in V_(Th) in ONVM with hydrophilic and polar polymers may be due to very rapid dissipation of transferred charges through the conductive channels which form from dipoles, residual moisture, or ions in the polymer electret layers. It is verified that the surface or bulk conductivities of polymer gate electret layers played a critical role in determining the non-volatile memory properties.
机译：基于并五苯场效应晶体管（FET）的有机非易失性存储器（ONVM）已使用各种可充电的薄聚合物栅极电介质（称为驻极体）制造到氧化硅绝缘层上。有机FET的整体传输曲线在正向和负向都有很大的偏移，并且可以通过相对简短地施加适当的外部栅极偏置来系统地和可逆地控制阈值电压（V_（Th））的偏移。转移后的转移曲线在10到5 s以上的较长时间内保持稳定。然而，仅在具有非极性和疏水性聚合物驻极体层的OFET中，V_（Th）的这种显着可逆移动才明显。此外，该装置中的存储窗口的大小分别与亲水性（由水接触角确定）和介电极性（由介电常数确定）成反比。 ONVM的存储行为源自聚合物栅极驻极体层中的电荷存储。因此，在具有亲水性和极性聚合物的ONVM中，V_（Th）的微小变化可能是由于通过电荷通道非常快地耗散了转移电荷，这些电荷是由聚合物驻极体层中的偶极子，残留水分或离子形成的。证实了聚合物栅极驻极体层的表面或本体电导率在确定非易失性存储特性中起着关键作用。

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