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Electron-hole Recombination In Uniaxially Aligned Semiconducting Polymers

机译：单轴取向半导体聚合物中的电子-空穴复合

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摘要

A promising, general strategy for improving performance of optoelectronic devices based on conjugated polymer semiconductors is to make better use of the fast intrachain transport along the covalently bonded polymer backbone. Little is known, however, abont how the recombination rate between electrons and holes would be affected in device structures in which current flow is primarily along the polymer chain. Here a light-emitting field effect transistor (LFET) structure with a uniaxially aligned semiconducting polymer is used to show that the width and shape of the recombination zone depend strongly on polymer alignment. For alignment of the polymer parallel to the current the emission zone is 5-10 times wider than for perpendicular alignment. 2D drift-diffusion modeling is used to show that such significant widening of the recombination zone in the case of parallel alignment implies that the recombination rate constant is more than 100 times lower than expected for standard Langevin recombination. On the basis of Monte Carlo modeling it is proposed that such unexpected weak recombination is a result of the significant mobility anisotropy of the aligned polymer. These results provide new fundamental insight into the recombination physics of polymer semiconductors.
机译：改善基于共轭聚合物半导体的光电器件性能的一种有希望的通用策略是更好地利用沿共价键合的聚合物主链的快速链内传输。然而，鲜为人知的是，在电流主要沿聚合物链流动的器件结构中，电子与空穴之间的复合速率将如何受到影响。此处，具有单轴取向半导体聚合物的发光场效应晶体管（LFET）结构用于显示重组区的宽度和形状强烈取决于聚合物取向。为了使聚合物平行于电流取向，发射区的宽度是垂直取向的5-10倍。使用2D漂移扩散模型表明，在平行比对的情况下，重组区的显着扩展意味着重组速率常数比标准Langevin重组的预期值低100倍以上。根据蒙特卡洛模型，提出这种意外的弱重组是取向聚合物明显的迁移率各向异性的结果。这些结果为聚合物半导体的复合物理学提供了新的基础见解。

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