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首页> 外文期刊>Advanced Functional Materials >Charge Transport and Photocurrent Generation in Poly(3-hexylthiophene): Methanofullerene Bulk-Heterojunction Solar Cells
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Charge Transport and Photocurrent Generation in Poly(3-hexylthiophene): Methanofullerene Bulk-Heterojunction Solar Cells

机译：聚（3-己基噻吩）中的电荷传输和光电流产生：甲基富勒烯本体-异质结太阳能电池

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摘要

The effect of controlled thermal annealing on charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (P3HT) and methanofullerene (PCBM) has been studied. With respect to the charge transport, it is demonstrated that the electron mobility dominates the transport of the cell, varying from 10~(-8) m~2 V~(-1) s~(-1) in as-cast devices to ≈ 3 x 10~(-7) m~2 V~(-1) s~(-1) after thermal annealing. The hole mobility in the P3HT phase of the blend is dramatically affected by thermal annealing. It increases by more than three orders of magnitude, to reach a value of up to ≈ 2 x 10~(-8) m~2 V~(-1) s~(-1) after the annealing process, as a result of an improved crystallinity of the film. Moreover, upon annealing the absorption spectrum of P3HT:PCBM blends undergo a strong red-shift, improving the spectral overlap with solar emission, which results in an increase of more than 60% in the rate of charge-carrier generation. Subsequently, the experimental electron and hole mobilities are used to study the photocurrent generation in P3HT:PCBM devices as a function of annealing temperature. The results indicate that the most important factor leading to a strong enhancement of the efficiency, compared with non-annealed devices, is the increase of the hole mobility in the P3HT phase of the blend. Furthermore, numerical simulations indicate that under short-circuit conditions the dissociation efficiency of bound electron-hole pairs at the donor/acceptor interface is close to 90%, which explains the large quantum efficiencies measured in P3HT:PCBM blends.
机译：研究了受控热退火对由规整型聚（3-己基噻吩）（P3HT）和亚甲基富勒烯（PCBM）的混合薄膜制成的体-异质结太阳能电池中电荷传输和光生的影响。关于电荷传输，证明了电子迁移率主导了电池的传输，从铸态器件中的10〜（-8）m〜2 V〜（-1）s〜（-1）变化到热退火后≈3 x 10〜（-7）m〜2 V〜（-1）s〜（-1）共混物在P3HT相中的空穴迁移率受热退火的影响很大。经过退火处理后，它增加了三个数量级以上，达到了≈2 x 10〜（-8）m〜2 V〜（-1）s〜（-1）的值。改善了薄膜的结晶度。此外，退火后，P3HT：PCBM共混物的吸收光谱发生强烈的红移，从而改善了与太阳光发射的光谱重叠，这导致电荷载流子生成速率提高了60％以上。随后，使用实验电子迁移率和空穴迁移率来研究P3HT：PCBM器件中光电流的产生与退火温度的关系。结果表明，与非退火设备相比，导致效率大幅提高的最重要因素是共混物P3HT相中空穴迁移率的提高。此外，数值模拟表明，在短路条件下，在供体/受体界面处结合的电子-空穴对的解离效率接近90％，这说明了在P3HT：PCBM共混物中测得的大量子效率。

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