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首页> 外文期刊>Advanced Functional Materials >Structural and electrostatic complexity at a pentacene/insulator interface
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Structural and electrostatic complexity at a pentacene/insulator interface

机译：并五苯/绝缘子界面的结构和静电复杂性

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摘要

The properties of organic-semiconductor/insulator (O/I) interfaces are critically important to the operation of organic thin-film transistors (OTFTs) currently being developed for printed flexible electronics. Here we report striking observations of structural defects and correlated electrostatic-potential variations at the interface between the benchmark organic semiconductor pentacene and a common insulator, silicon dioxide. Using an unconventional mode of lateral force microscopy, we generate high-contrast. images of the grain-boundary (GB) network in the first pentacene monolayer. Concurrent imaging by Kelvin probe force microscopy reveals localized surface-potential wells at the GBs, indicating that GBs will serve as charge-carrier (hole) traps. Scanning probe microscopy and chemical etching also demonstrate that slightly thicker pentacene films have domains with high line-dislocation densities. These domains produce significant changes in surface potential across the film. The correlation of structural and electrostatic complexity at O/I interfaces has important implications for understanding electrical transport in OTFTs and for defining strategies to improve device performance.
机译：有机半导体/绝缘体（O / I）界面的特性对于当前正在开发用于印刷柔性电子产品的有机薄膜晶体管（OTFT）的操作至关重要。在这里，我们报告了在基准有机半导体并五苯与普通绝缘子二氧化硅之间的界面处出现的结构缺陷和相关的静电势变化的惊人观察结果。使用横向力显微镜的非常规模式，我们产生了高对比度。第一并五苯单层中的晶界（GB）网络的图像。通过开尔文探针力显微镜的并行成像显示了GBs上的局部表面势阱，表明GBs将充当电荷载流子（空穴）陷阱。扫描探针显微镜和化学蚀刻还表明，稍厚的并五苯薄膜具有高线位错密度的畴。这些畴在整个膜上产生明显的表面电势变化。 O / I接口处结构和静电复杂性的相关性对于理解OTFT中的电传输和定义改善器件性能的策略具有重要意义。

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