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Morphological Control of Nanoporous Films by the Use of Functionalized Cyclodextrins as Porogens

机译：功能化的环糊精作为致孔剂的纳米多孔膜的形态控制。

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摘要

Porous cyclic silsesquioxane (CSSQ) thin films containing nanopores (～ 2 nm) with low dielectric constant (k < 2.2), have been prepared by using various kinds of cyclodextrin (CD) derivatives as porogenic materials. The pore structure, including average pore size and interconnectivity, can be controlled by changing the functional groups of the cyclodextrin derivatives. The pore structure is found to be strongly related to the affinity of the functional groups between CD molecules. The electrical and mechanical properties of the porous thin films were monitored in order to determine the relationship between the pore structure and film properties. The mechanical properties of porous low-k thin films (total porosity ～ 30 %) prepared with CD derivatives are found to be correlated with the pore interconnection length. The longer the deduced interconnection length in the thin film, the worse the mechanical properties (such as hardness and modulus) of the thin film, even though the porogen-induced pore diameters are very small (～ 2 nm).
机译：使用各种环糊精（CD）衍生物作为致孔材料，制备了具有低介电常数（k <2.2）的纳米孔（〜2 nm）的多孔环状倍半硅氧烷（CSSQ）薄膜。可以通过改变环糊精衍生物的官能团来控制孔结构，包括平均孔径和互连性。发现孔结构与CD分子之间的官能团的亲和力密切相关。监测多孔薄膜的电和机械性能，以便确定孔结构和薄膜性能之间的关系。用CD衍生物制备的多孔低k薄膜（总孔隙度〜30％）的力学性能与孔的互连长度有关。推导的薄膜互连长度越长，即使致孔剂引起的孔径很小（约2 nm），薄膜的机械性能（如硬度和模量）也越差。

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  • 来源
    《Advanced Functional Materials》 |2004年第3期|p. 277-282|共6页
  • 作者

    Jin-Heong Yim; Jong-Baek Seon; Hyun-Dem Jeong; Lyong Sun Pu; Mikhail R. Baklanov; David W. Gidley;

  • 作者单位

    Electronic Materials Lab, Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, 449-712, Korea;

    Electronic Materials Lab, Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, 449-712, Korea;

    Electronic Materials Lab, Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, 449-712, Korea;

    Electronic Materials Lab, Samsung Advanced Institiue of Technology (SAIT), San 14-1, Nongseo-ri, Kiheung-eup, Yongin-shi, Kyungki-do, 449-712, Korea;

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

    Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA;

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  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
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