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首页> 外文期刊>Advanced Materials >Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO_3 Resistive Switching Memories
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Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO_3 Resistive Switching Memories

机译：揭示多晶SrTiO_3电阻转换记忆中纳米丝形成的起源和机理。

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摘要

Three central themes in the study of the phenomenon of resistive switching are the nature of the conducting phase, why it forms, and how it forms. In this study, the answers to all three questions are provided by performing switching experiments in situ in a transmission electron microscope on thin films of the model system polycrystalline SrTiO3. On the basis of high-resolution transmission electron microscopy, electron-energy-loss spectroscopy and in situ current-voltage measurements, the conducting phase is identified to be SrTi11O20. This phase is only observed at specific grain boundaries, and a Ruddlesden-Popper phase, Sr3Ti2O7, is typically observed adjacent to the conducting phase. These results allow not only the proposal that filament formation in this system has a thermodynamic origin-it is driven by electrochemical polarization and the local oxygen activity in the film decreasing below a critical value-but also the deduction of a phase diagram for strongly reduced SrTiO3. Furthermore, why many conducting filaments are nucleated at one electrode but only one filament wins the race to the opposite electrode is also explained. The work thus provides detailed insights into the origin and mechanisms of filament generation and rupture.
机译：研究电阻切换现象的三个中心主题是导电相的性质，其形成方式以及形成方式。在这项研究中，这三个问题的答案是通过在透射电子显微镜中对模型系统多晶SrTiO3薄膜进行的原位开关实验提供的。在高分辨率透射电子显微镜，电子能量损失谱和原位电流-电压测量的基础上，确定导电相为SrTi11O20。仅在特定的晶界观察到该相，通常在导电相附近观察到Ruddlesden-Popper相Sr3Ti2O7。这些结果不仅提出了在该系统中长丝形成具有热力学起源的提议（它是由电化学极化驱动的，而且膜中的局部氧活度降低到临界值以下），而且还可以推断出强还原SrTiO3的相图。 。此外，还解释了为什么许多导电细丝在一个电极上成核，而只有一根细丝赢得与相对电极的竞争。因此，这项工作对细丝产生和破裂的起源和机理提供了详细的见解。

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  • 来源
    《Advanced Materials》 |2019年第28期|1901322.1-1901322.12|共12页
  • 作者

    Kwon Deok-Hwang; Lee Shinbuhm; Kang Chan Soon; Choi Yong Seok; Kang Sungjin; Cho Hae Lim; Sohn Woonbae; Jo Janghyun; Lee Seung-Yong; Oh Kyu Hwan; Noh Toe Won; De Souza Roger A.; Martin Manfred; Kim Miyoung;

  • 作者单位

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Daegu Gyeongbuk Inst Sci & Technol, Dept Emerging Mat Sci, Daegu 42988, South Korea|Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea;

    Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea|Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea;

    Rhein Westfal TH Aachen, Inst Phys Chem, D-52074 Aachen, Germany;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Rhein Westfal TH Aachen, Inst Phys Chem, D-52074 Aachen, Germany;

    Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea|Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea|Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea;

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  • 正文语种 eng
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  • 关键词

    memristors; nanofilaments; resistive switching; transmission electron microscopy (TEM);

    机译：忆阻器;纳米丝;电阻开关;透射电子显微镜（TEM）;

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