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首页> 外文期刊>Advanced Materials >Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications
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Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications

机译：用于宽带光子非易失性存储应用的磷/ ZnO纳米异质结

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摘要

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques.
机译：结合了光敏技术和数据存储功能且具有低功耗的高性能光子非易失性存储器，可确保计算机系统的能源效率。这项研究首先报告原位衍生的磷/ ZnO杂化异质结纳米粒子及其在宽带响应光子非易失性存储器中的应用。光子非易失性存储器始终表现出从紫外（380 nm）到近红外（785 nm）的宽带响应，并且SET电压的变化可控。宽带电阻切换归因于增强的光子收集，快速的激子分离以及纳米异质结中氧空位细丝的形成。另外，与报道的基于原始磷基的非易失性存储器相比，该器件在暴露于空气下具有出色的稳定性。认为优异的抗氧化能力源自磷的孤对电子的快速转移。磷光体/ ZnO纳米异质结的独特组装为多功能宽带响应数据存储技术铺平了道路。

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  • 来源
    《Advanced Materials》 |2018年第30期|1801232.1-1801232.9|共9页
  • 作者

    Hu Liang; Yuan Jun; Ren Yi; Wang Yan; Yang Jia-Qin; Zhou Ye; Zeng Yu-Jia; Han Su-Ting; Ruan Shuangchen;

  • 作者单位

    Shenzhen Univ, Coll Optoelect Engn, Shenzhen Key Lab Laser Engn, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Coll Optoelect Engn, Shenzhen Key Lab Laser Engn, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Coll Optoelect Engn, Shenzhen Key Lab Laser Engn, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China;

    Shenzhen Univ, Coll Optoelect Engn, Shenzhen Key Lab Laser Engn, Shenzhen 518060, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    broadband photonic nonvolatile memory; phosphorene; van der Waals heterojunctions; ZnO;

    机译：宽带光子非易失性存储器磷烯范德华异质结ZnO;

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