Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient-Pressure X-Ray Photoelectron Spectroscopy

Gopal Chirranjeevi Balaji; El Gabaly Farid; McDaniel Anthony H.; Chueh William C.

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Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient-Pressure X-Ray Photoelectron Spectroscopy

机译：常压X射线光电子能谱研究掺杂氧化铈中异常大表面电容的来源和可调谐性

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The volumetric redox (chemical) capacitance of the surface of CeO2-delta films is quantified in situ to be 100-fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10-fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.

机译：在催化相关条件下，CeO2-delta薄膜表面的体积氧化还原（化学）电容被定量为比体积值大100倍。 Sm的添加会稍微降低表面氧的非化学计量，但通过减轻缺陷相互作用，使表面化学电容提高10倍，从而突出了差异化非化学计量对催化的重要性。

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《Advanced Materials》 |2016年第23期|4692-4697|共6页
作者
Gopal Chirranjeevi Balaji; El Gabaly Farid; McDaniel Anthony H.; Chueh William C.;
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Stanford Univ, Dept Mat Sci & Engn, 496 Lomita Mall, Stanford, CA 94305 USA;

Sandia Natl Labs, Livermore, CA 94550 USA;

Sandia Natl Labs, Livermore, CA 94550 USA;

Stanford Univ, Dept Mat Sci & Engn, 496 Lomita Mall, Stanford, CA 94305 USA|Sandia Natl Labs, Livermore, CA 94550 USA|Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA;

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Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient-Pressure X-Ray Photoelectron Spectroscopy

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