Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

Liu Bo; Zhao Weijie; Ding Zijing; Verzhbitskiy Ivan; Li Linjun; Lu Junpeng; Chen Jianyi; Eda Goki; Loh Kian Ping

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Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

机译：静电调谐多体效应在含氟聚合物基板上的单层MoS2和WS2的工程带隙

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Intrinsic electrical and excitonic properties of monolayer transition-metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid-state back gates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandgap renormalization, Pauli blocking, and carrier screening against carrier doping.

机译：可以在CYTOP含氟聚合物基底上揭示单层过渡金属二卤化二硫化物的内在电和激子性质，并大大抑制了无意掺杂和介电筛选。通过施加固态背栅，在单层WS2中观察到了双极传输行为。单层MoS2和WS2的激子性质由带隙重新归一化，保利阻断和针对载流子掺杂的载流子筛选之间的复杂相互作用决定。

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来源
《Advanced Materials》 |2016年第30期|6457-6464|共8页
作者
Liu Bo; Zhao Weijie; Ding Zijing; Verzhbitskiy Ivan; Li Linjun; Lu Junpeng; Chen Jianyi; Eda Goki; Loh Kian Ping;
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Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore|Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore;

Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore;

Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore|Shenzhen Univ, Coll Optoelect Engn, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China;

Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore;

Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore|Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore;

Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore;

Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore;

Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore|Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore;

Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore|Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore|Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore;

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2. Bandgap engineering of MoS2/MX2 (MX2 = WS2, MoSe2 and WSe2) heterobilayers subjected to biaxial strain and normal compressive strain [J] . Su Xiangying, Ju Weiwei, Zhang Ruizhi, RSC Advances . 2016,第22期

机译：MOS2 / MX2（MX2 = WS2，MOSE2和WSE2）的带隙工程，经受双轴应变和正常压缩菌株的异质层
3. The electronic properties tuned by the phase transition between the semiconducting and metallic phase of monolayer MoS2/WS2 [J] . Hu Ziyu, Zhang Shengli Phase Transitions . 2015,第7期

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4. Ultra-Narrowband Optical Absorption by MoS2 and WS2 TMDC Monolayers Using Octonacci and Pell Defective Quasi-Photonic Crystals [C] . Sabrina Rahman, Angkur Ghosh Priyam, Aditi Sen, IEEE SouthEast Conference . 2021

机译：MOS2和WS2 TMDC单层使用Octonacci和Pell缺陷准光子晶体的超窄带光学吸收
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机译：通过高温和空间分辨拉曼散射和光致发光研究了基底对2D材料，石墨烯，MoS2，WS2和黑磷的影响。
6. Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study [O] . Ke Yang, Tianyu Liu, Xiao-Dong Zhang 2021

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7. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure [O] . He Xin, Li Hai, Zhu Zhiyong, 2016

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Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

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