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Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

机译:空气中层状半导体碲化镓的带隙重组

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摘要

A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
机译:证实了层状GaTe的巨大带隙减小。氧气对Te端表面的化学吸附会导致导带发生显着重组,从而导致带隙低于0.8 eV,而原始GaTe的带隙为1.65 eV。原始间隙的局部恢复是通过热退火实现的,这表明可通过层状半导体的表面访问可逆的带状工程。

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  • 来源
    《Advanced Materials》 |2016年第30期|6465-6470|共6页
  • 作者单位

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Arizona State Univ, Dept Mat Sci & Engn, Tempe, AZ 85287 USA;

    Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

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