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机译:空气中层状半导体碲化镓的带隙重组
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Arizona State Univ, Dept Mat Sci & Engn, Tempe, AZ 85287 USA;
Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
机译:碲化铅基半导体中镓深中心的性质
机译:磷化镓间隙的氨解扫描到纳米晶宽带隙半导体氮化镓GaN
机译:具有超视图带隙的半导体上宽时域的表面光伏光谱:氧化镓的示例
机译:通过12 V至48 V氮化镓DC / DC转换器中的频谱控制来提高宽带隙半导体的允许开关速率
机译:半导体的压电调制和光调制研究:I.稀释的磁性半导体。二。砷化镓/铝镓-砷化物,锌-硒化物和镉-锰-碲化物异质结构。
机译:双层碲化镓层的钝化石墨烯封装
机译:空气中分层半导体镓碲化物的带隙重构
机译:在包括非氮化镓柱的基板上制造氮化镓半导体层的方法,以及由此制造的氮化镓半导体结构。