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机译:氧化嵌入使Qui缝的二维MoS2带隙加宽
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea;
Korea Adv Inst Sci & Technol, Dept Phys, Dept Mat Sci & Engn, Graphene Res Ctr KI Nano Century, Taejon 305701, South Korea;
机译:带隙和界面在增强2D-2D黑色磷/ MOS2光催化剂的光催化H-2生成活动中的作用
机译:氮掺杂氧化铜的光学带隙加宽和相变
机译:中间层间隙加宽了三氧化氧化钼作为双离子插入能量存储装置的高速阳极
机译:基于2D MoS2和VO2中的电子相变的陡坡度FET
机译:2D MOS2和MOS2 / WS2 Hetrosture的纳米结构表征,制造和装置
机译:介电环境和可调带隙晶体管的单层MoS2带隙调制
机译:中间层间隙加宽了三氧化氧化钼作为双离子插入能量存储装置的高速阳极