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Flexible and Transferrable Self-Assembled Nanopatterning on Chemically Modified Graphene

机译：在化学修饰的石墨烯上的柔性和可转移的自组装纳米图案

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摘要

Block copolymer (BCP) self-assembly generates dense and periodic nanodomains,whose characteristic dimensions can be as small as 3 nm. Such self-assembly in thin films can create two-dimensional lithographic nanotem-plates with pattern precision barely attainable by other methods. Substantial progress in the synergistic integration of BCP self-assembly with e-beam lithography and ArF or other photolithography,demonstrates that this self-assembly based nanopatterning is a promising technology to complement the resolution limit of a conventional lithography. Meanwhile,BCP self-assembled nanopatterning has been regarded as an intrinsic two-dimensional patterning method specifically useful for hard and flat inorganic substrates. The well-established processing steps involved with the formation of uniform thickness,ultrathin (typically less than 100 nm) BCP film via spin casting and subsequent thermal/solvent annealing are generally considered incompatible to three-dimensional geometries or conventional flexible polymer substrates with low chemical/thermal stability and surface roughness typically larger than nanoscale.
机译：嵌段共聚物（BCP）自组装产生致密且周期性的纳米域，其特征尺寸可小至3 nm。这种在薄膜中的自组装可以创建二维光刻纳米印版，其图案精度无法通过其他方法获得。 BCP自组装与电子束光刻和ArF或其他光刻的协同集成取得了实质性进展，这表明这种基于自组装的纳米图案化是一种有前途的技术，可以补充常规光刻的分辨率极限。同时，BCP自组装纳米图案化已被视为固有的二维图案化方法，特别适用于坚硬和平坦的无机基材。人们普遍认为，完善的工艺步骤涉及通过旋铸和随后的热/溶剂退火形成均一厚度，超薄（通常小于100 nm）的BCP膜，通常不适合三维几何形状或化学含量低的常规柔性聚合物基材/热稳定性和表面粗糙度通常大于纳米级。

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  • 来源
    《Advanced Materials》 |2013年第9期|1331-1335|共5页
  • 作者

    Ju Young Kim; Bong Hoon Kim; Jin Ok Hwang; Seong-Jun Jeong; Dong Ok Shin; Jeong Ho Mun; Young Joo Choi; Hyeong Min Jin; Sang Ouk Kim;

  • 作者单位

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

    Center for Nanomaterials and Chemical Reactions Institute for Basic Science (IBS) Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 305-701,Daejeon,Republic of Korea;

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