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首页> 外文期刊>Advanced Materials >Ultralow-Transition-Energy Organic Complex on Graphene for High-Performance Shortwave Infrared Photodetection
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Ultralow-Transition-Energy Organic Complex on Graphene for High-Performance Shortwave Infrared Photodetection

机译:用于高性能短波红外光电探测的石墨烯上超级转换 - 能量复合物

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摘要

Room-temperature, high-sensitivity, and broadband photodetection up to the shortwave infrared (SWIR) region is extremely significant for a wide variety of optoelectronic applications, including contamination identification, thermal imaging, night vision, agricultural inspection, and atmospheric remote sensing. Small-bandgap semiconductor-based SWIR photodetectors generally require deep cooling to suppress thermally generated charge carriers to achieve increased sensitivity. Meanwhile, the photogating effect can provide an alternative way to achieve superior photosensitivity without the need for cooling. The optical photogating effect originates from charge trapping of photoinduced carriers at defects or interfaces, resulting in an extremely high photogain (10(6)or higher). Here, a highly sensitive SWIR hybrid photodetector, fabricated by integrating an organic charge transfer complex on a graphene transistor, is reported. The organic charge transfer complex (tetrathiafulvalene-chloranil) has an exceptional low-energy intermolecular electronic transition down to 0.5 eV, with the aim of achieving efficient SWIR absorption for wavelengths greater than 2 mu m. The photogating effect at the organic complex and graphene interface enables an extremely high photogain and a high detectivity of approximate to 10(13)Jones, along with a response time of 8 ms, at room temperature for a wavelength of 2 mu m.
机译:房间温度,高灵敏度和宽带光电探测到短波红外(SWIR)区域对于各种光电应用来说非常重要,包括污染识别,热成像,夜视,农业检查和大气遥感。基于小带隙半导体的SWIR光电探测器通常需要深冷却以抑制热产生的电荷载流子以实现增加的灵敏度。同时,光效应效果可以提供一种替代方法来实现优异的光敏性,而无需冷却。光学光学效果来自缺陷或界面的光诱导载体的电荷俘获,导致极高的光素(10(6)或更高)。这里,报道了一种高度敏感的SWIR混合光探测器,通过将有机电荷转移络合物与石墨烯晶体管积分而制备。有机电荷转移复合物(四硫甲戊烯-氯丙烷)具有卓越的低能量分子间电子转换至0.5eV,目的是实现大于2μm的波长的有效旋转吸收。有机复合物和石墨烯界面处的光致效果使得极高的光致光素和高次探测率与10(13)个琼斯的高次探测器,以及8ms的响应时间,在室温下为2μm的波长。

著录项

  • 来源
    《Advanced Materials》 |2020年第37期|2002628.1-2002628.7|共7页
  • 作者单位

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    charge transfer complex; graphene; photodetection; photogating; shortwave infrared region;

    机译:电荷转移复合物;石墨烯;光电探测;映像;短波红外区域;

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