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Solution-Processed Organic Solar Cells with High Open-Circuit Voltage of 1.3 V and Low Non-Radiative Voltage Loss of 0.16 V

机译:解决方案处理的有机太阳能电池,具有1.3V的高开路电压,低辐射电压损耗为0.16 V

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摘要

Compared with inorganic or perovskite solar cells, the relatively large non-radiative recombination voltage losses (Delta Vnon-rad) in organic solar cells (OSCs) limit the improvement of the open-circuit voltage (V-oc). Herein, OSCs are fabricated by adopting two pairs of D-pi-A polymers (PBT1-C/PBT1-C-2Cl and PBDB-T/PBDB-T-2Cl) as electron donors and a wide-bandgap molecule BTA3 as the electron acceptor. In these blends, a charge-transfer state energy (E-CT) as high as 1.70-1.76 eV is achieved, leading to small energetic differences between the singlet excited states and charge-transfer states (Delta E-CT approximate to 0.1 eV). In addition, after introducing chlorine atoms into the pi-bridge or the side chain of benzodithiophene (BDT) unit, electroluminescence external quantum efficiencies as high as 1.9 x 10(-3)and 1.0 x 10(-3)are realized in OSCs based on PBTI-C-2Cl and PBDB-T-2Cl, respectively. Their corresponding Delta V(non-rad)are 0.16 and 0.17 V, which are lower than those of OSCs based on the analog polymers without a chlorine atom (0.21 and 0.24 V for PBT1-C and PBDB-T, respectively), resulting in highV(oc)of 1.3 V. The Delta V(non-rad)of 0.16 V andV(oc)of 1.3 V achieved in PBT1-C-2Cl:BTA3 OSCs are thought to represent the best values for solution-processed OSCs reported in the literature so far.
机译:与无机或钙钛矿太阳能电池相比,有机太阳能电池(OSC)中的相对大的非辐射重组电压损失(Delta VNON-RAD)限制了开路电压(V-OC)的改善。在此,通过采用两对D-PI-A聚合物(PBT1-C / PBT1-C-2CL和PBDB-T / PBDB-T-2CL)作为电子供体和宽带隙分子BTA3作为电子来制造OSC受体。在这些混合物中,实现了高达1.70-1.76eV的电荷转移状态能量(E-CT),导致单线兴奋状态和电荷转移状态之间的小能量差异(Delta E-CT近似为0.1eV) 。此外,在将氯原子引入Pi桥或苯二碳烯(BDT)单元的侧链之后,在基于OSC的OSC中实现了高达1.9×10(-3)和1.0×10(-3)的电致发光外部量子效率在PBTI-C-2CL和PBDB-T-2CL上。它们相应的ΔV(非Rad)为0.16和0.17V,其基于没有氯原子的模拟聚合物的OSC的OSC(分别为PBT1-C和PBDB-T的0.21和0.24V),导致1.3 V的HIGHV(OC)0.16 V andV(OC)的ΔV(非Rad)在PBT1-C-2CL中实现的1.3V(OC):BTA3 OSC被认为是表示报告的解决方案处理OSC的最佳值到目前为止的文献。

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  • 来源
    《Advanced Materials》 |2020年第39期|2002122.1-2002122.7|共7页
  • 作者单位

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst & Hierarch Fabricat Beijing 100190 Peoples R China;

    Beihang Univ Sch Chem Beijing 100191 Peoples R China;

    Donghua Univ Ctr Adv Low Dimens Mat State Key Lab Modificat Chem Fibers & Polymer Mat Shanghai 201620 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst & Hierarch Fabricat Beijing 100190 Peoples R China;

    Shandong Univ Sch Phys State Key Lab Crystal Mat Jinan 250100 Peoples R China;

    Shandong Univ Sch Phys State Key Lab Crystal Mat Jinan 250100 Peoples R China;

    Donghua Univ Ctr Adv Low Dimens Mat State Key Lab Modificat Chem Fibers & Polymer Mat Shanghai 201620 Peoples R China;

    Zhengzhou Univ Henan Inst Adv Technol Zhengzhou 450003 Peoples R China;

    Korea Univ Coll Scyience Dept Chem Seoul 136713 South Korea;

    Korea Univ Coll Scyience Dept Chem Seoul 136713 South Korea;

    Beihang Univ Sch Chem Beijing 100191 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst & Hierarch Fabricat Beijing 100190 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    benzotriazole; chlorination; non-fullerene acceptors; non-radiative voltage loss; open-circuit voltage;

    机译:苯并三唑;氯化;非富勒烯受体;非辐射电压损耗;开路电压;

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