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Conformal Transparent Conducting Oxides on Black Silicon

机译：黑硅上的共形透明导电氧化物

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摘要

Black silicon (b-Si) has the potential for groundbreaking applications in microelectromechanical systems (MEMS), packaging technologies, detector- and emitter-optics, terahertz emitters, solar cells, and many more. Recently, homojunction crystalline silicon solar cells with b-Si surface structures have been demonstrated with conversion efficiencies in the range of 10.2% to 17.2%. These conversion efficiencies are, however, not higher than those of state-of-the-art homojunction silicon solar cells. One reason is the interfacial electronic properties of the b-Si layer. In the literature, typically a thermally grown oxide is used to passivate the statistically structured surface of b-Si and metal contacts are fired into the oxide. Because of the enhanced surface area of the b-Si surface, electronic transport is strongly influenced by surface-recombination and complex field distributions inside the nanostructured needles. In this communication, we address the question: is a perfectly conformal coating with a transparent conducting oxide (TCO) possible on a b-Si surface and how does the TCO affect the optical properties of the b-Si?
机译：黑硅（b-Si）在微机电系统（MEMS），封装技术，探测器和发射器光学器件，太赫兹发射器，太阳能电池等领域具有突破性的应用潜力。最近，已经证明具有b-Si表面结构的同质结晶体硅太阳能电池的转换效率在10.2％至17.2％的范围内。然而，这些转换效率不高于现有技术的同质结硅太阳能电池的转换效率。原因之一是b-Si层的界面电子特性。在文献中，通常使用热生长的氧化物来钝化b-Si的统计结构表面，并将金属触点烧成氧化物。由于b-Si表面的表面积增加，电子传输受到纳米结构针内部的表面复合和复杂的场分布的强烈影响。在此交流中，我们解决了一个问题：在b-Si表面上是否可以形成具有透明导电氧化物（TCO）的完美保形涂层？TCO如何影响b-Si的光学性能？

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  • 来源
    《Advanced Materials》 |2010年第44期|p.5035-5038|共4页
  • 作者

    Martin Otto; Matthias Kroll; Thomas Kasebier; Seung-Mo Lee; Matti Putkonen; Roland Salzer; Paul T. Miclea; Ralf B. Wehrspohn;

  • 作者单位

    Martin-Luther-University Halle-Wittenberg 06120 Halle (Germany);

    Friedrich-Schiller-Universityjena Institute for Applied Physics 07743 Jena (Germany);

    Friedrich-Schiller-Universityjena Institute for Applied Physics 07743 Jena (Germany);

    Max Planck Institute of Microstructure Physics Experimental Department II Weinberg 2, 06120 Halle (Germany);

    Beneq Oy Ensimmainen Savu 1, 01511 Vantaa (Finland) Dr. M. Putkonen, Prof. R. B. Wehrspohn Laboratory of Inorganic Chemistry Aalto University School of Science and Technology Aalto (Finland);

    Fraunhofer Institute for Mechanics of Materials 06120 Halle (Germany);

    Martin-Luther-University Halle-Wittenberg 06120 Halle (Germany);

    Martin-Luther-University Halle-Wittenberg 06120 Halle (Germany);

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