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Ultralow-Threshold Laser Realized in Zinc Oxide

机译：氧化锌实现的超低阈值激光

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摘要

Short-wavelength semiconductor lasers have attracted much attention since the demonstration of laser diodes in ZnSe and GaN. The attention derives mainly from the versatile applications of this type of lasers in data storage, display, communication, lighting, and medical fields. Zinc oxide (ZnO) has a wide bandgap (3.37 eV) and a large exciton-binding energy (60 meV), which is much larger than that of ZnSe (22 meV) and GaN (25 meV), suggesting that high-efficiency low-threshold light-emitting devices or laser diodes operating at room or even higher temperatures can be realized. However, up to now most of the lasing actions in ZnO have been demonstrated by optical pumping, while the reports on electrically pumped lasing are very scarce, even though lasing from ZnO by electrical excitation is highly desirable. Leong et al. have demonstrated electrically pumped lasing in ZnO/SiO_2 nanocomposites sandwiched by p-SiC or p-GaN and n-ZnO:Al. Moreover, electrically pumped lasers have also been observed in Au/SiO_x/ ZnO metal-insulator-semiconductor structures.
机译：自从演示了ZnSe和GaN中的激光二极管以来，短波长半导体激光器已经引起了广泛的关注。注意力主要来自这种激光器在数据存储，显示，通信，照明和医疗领域中的广泛应用。氧化锌（ZnO）具有较宽的带隙（3.37 eV）和较大的激子结合能（60 meV），比ZnSe（22 meV）和GaN（25 meV）大得多，表明高效率低可以实现在室温甚至更高温度下工作的阈值发光器件或激光二极管。但是，到目前为止，ZnO中的大多数激光作用已经通过光泵浦得到了证明，尽管非常需要通过电激发从ZnO进行激光发射，但关于电泵浦激光发射的报道却很少。 Leong等。已经证明了在被p-SiC或p-GaN和n-ZnO：Al夹在中间的ZnO / SiO_2纳米复合材料中的电泵浦激光。此外，还已经在Au / SiO_x / ZnO金属-绝缘体-半导体结构中观察到电泵浦激光器。

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  • 来源
    《Advanced Materials》 |2009年第16期|1613-1617|共5页
  • 作者

    Hai Zhu; Chong-Xin Shan; Bin Yao; Bing-Hui Li; Ji-Ying Zhang; Zheng-Zhong Zhang; Dong-Xu Zhao; De-Zhen Shen; Xi-Wu Fan; You-Ming Lu; Zi-Kang Tang;

  • 作者单位

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China) Graduate School of the Chinese Academy of Sciences Beijing 100049 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China);

    College of Materials Science and Engineering Shenzhen University Shenzhen 518060 (P. R. China);

    Department of Physics Hong Kong University of Science & Technology Clear Water Bay, Kowloon Hong Kong (P. R. China);

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