A Characterization Study of a Nanowire-Network Transistor with Various Channel Layers

Jae Eun Jang; Seung Nam Cha; Tim P. Butler; Jung Inn Sohn; Jung Woo Kim; Young Wan Jin; Gehan A.J. Amaratunga; Jong Min Kim

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A Characterization Study of a Nanowire-Network Transistor with Various Channel Layers

机译：具有不同沟道层的纳米线网络晶体管的特性研究

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Transistors that use nanowires or nanotubes as the channel material have shown good performance as a result of their unique monocrystalline structure, with various advantages such as small cell dimensions and simplified lithographic processes for high-density device structures. However, difficulties in aligning nanowires into desired positions and high-growth-temperature processes have slowed the development of the single-nanowire transistor. The concept of a nanowire-network transistor that uses many rather than single nanowires as the channel has shown a higher probability of realization. It can also be fabricated at low temperatures, opening up the possibility of using glass or plastic as the substrate. Although carbon nanotubes (CNTs) have been thoroughly investigated in network transistor applications, performance is limited by the fraction of metallic CNTs.

机译：使用纳米线或纳米管作为沟道材料的晶体管由于其独特的单晶结构而显示出良好的性能，具有各种优势，例如小单元尺寸和简化的高密度器件结构的光刻工艺。然而，难以将纳米线对准到期望的位置以及高生长温度的过程减慢了单纳米线晶体管的开发。使用许多而不是单个纳米线作为沟道的纳米线网络晶体管的概念已经显示出更高的实现可能性。它也可以在低温下制造，从而开辟了使用玻璃或塑料作为基材的可能性。尽管已经在网络晶体管应用中对碳纳米管（CNT）进行了深入研究，但性能受到金属CNT比例的限制。

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《Advanced Materials》 |2009年第41期|4139-4142|共4页
作者
Jae Eun Jang; Seung Nam Cha; Tim P. Butler; Jung Inn Sohn; Jung Woo Kim; Young Wan Jin; Gehan A.J. Amaratunga; Jong Min Kim;
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Samsung Advanced Institute of Technology Yongin, 449-712 (Korea);

Samsung Advanced Institute of Technology Yongin, 449-712 (Korea);

Electrical Engineering Division Department of Engineering University of Cambridge Cambridge, CB3 OFA (UK);

Nanoscience Centre University of Cambridge Cambridge, CB3 1FA (UK);

Samsung Advanced Institute of Technology Yongin, 449-712 (Korea);

Samsung Advanced Institute of Technology Yongin, 449-712 (Korea);

Electrical Engineering Division Department of Engineering University of Cambridge Cambridge, CB3 OFA (UK);

Samsung Advanced Institute of Technology Yongin, 449-712 (Korea);

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A Characterization Study of a Nanowire-Network Transistor with Various Channel Layers

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