Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Jong Kyu Kim; Sameer Chhajed; Martin F. Schubert; E. Fred Schubert; Arthur J. Fischer; Mary H. Crawford; Jaehee Cho; Hyunsoo Kim; Cheolsoo Sone

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Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

机译：渐变折射率铟锡氧化物减反射触点增强GaInN发光二极管的光吸收性能

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In photonics and optics, the refractive index of a material, first introduced by Isaac Newton as the optical density, is the most fundamental material constant. Since the refractive index determines refraction and reflection occurring at the boundary between two media, it is a critical parameter for the design of optical components, such as distributed Bragg reflectors (DBRs), omnidirectional reflectors,antireflec-tion (AR) coatings, and optical resonators.

机译：在光子学和光学中，艾萨克·牛顿（Isaac Newton）首先引入的材料折射率是光密度，它是最基本的材料常数。由于折射率决定了发生在两种介质之间的边界的折射和反射，因此它是设计光学组件（例如分布式布拉格反射器（DBR），全向反射器，抗反射（AR）涂层和光学组件）的关键参数。谐振器。

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《Advanced Materials》 |2008年第4期|p.801-804|共4页
作者
Jong Kyu Kim; Sameer Chhajed; Martin F. Schubert; E. Fred Schubert; Arthur J. Fischer; Mary H. Crawford; Jaehee Cho; Hyunsoo Kim; Cheolsoo Sone;
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正文语种 eng
中图分类工程材料学;
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1. Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn/Ag microcontacts [J] . Jong Kyu Kim, J.-Q. Xi, Hong Luo, Applied Physics Letters . 2006,第14期

机译：具有NiZn / Ag微接触的Al基全向反射器可增强GaInN近紫外发光二极管的光提取
2. Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GalnN light-emitting diodes [J] . Ahmed N. Noemaun, Frank W. Mont, Guan-Bo Lin, Journal of Applied Physics . 2011,第V110N5期

机译：由图案化的渐变折射率涂层组成的光学功能表面，可增强GalnN发光二极管的光提取
3. Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewalls [J] . Ma Ming, Cho Jaehee, Fred Schubert E., Applied Physics Letters . 2012,第14期

机译：带有锥形侧壁的TiO2微柱构图的GaInN发光二极管具有很强的光提取能力
4. Enhancement of Light Extraction in GaInN Light-Emitting Diodes with Graded-Index Indium Tin Oxide Layer [C] . Jong Kyu Kim, Martin F. Schubert, J. Q. Xi, Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：增强增强增强率探测铟锡氧化铟锡的增益发光二极管中的光提取
5. Optically Functional Surfaces for High Light-Extraction and Control of the Pattern of Light Emission from Gallium Indium Nitride/Gallium Nitride Light-Emitting Diodes [D] . Noemaun, Ahmed Nayaz 2011

机译：光学功能性表面，用于高光提取和控制氮化镓铟/氮化镓发光二极管的发光模式
6. Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes [O] . Young-Jin Jung, Seong-Yong Cho, Jee-Won Jung, 2019

机译：氧化铟锡和发光层厚度对钙钛矿发光二极管光输出耦合的影响
7. Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars [O] . Jong Kyu Kim, Ahmed N. Noemaun, Frank W. Mont, 2008

机译：通过分级折射率微米消除GAINN发光二极管的全内反射

Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

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