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首页> 外文期刊>Advanced Materials >Controlling Electrical Properties of Conjugated Polymers via a Solution-Based p-Type Doping
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Controlling Electrical Properties of Conjugated Polymers via a Solution-Based p-Type Doping

机译：通过基于溶液的p型掺杂控制共轭聚合物的电性能

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One of the most important key techniques for the development of efficient optoelectronic devices is the ability to control the electrical properties of transport layers via p- and n-type doping with well-defined levels of impurities. The basic principle of doping in organic semiconductors is equivalent to that in inorganic materials. Impurities with appropriate electronic properties can be added to donate an electron to the lowest unoccupied molecular orbital (LUMO) levels for n-type doping or to remove an electron from the highest occupied molecular orbital (HOMO) levels for p-type doping. Controlled p-doping of small molecule organic layers, in particular hole-transport layers (HTL) such as vanadyl-phthalocyanine (VOPc), zinc phthalocyanine (ZnPC), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD), and 4,4',4"-tris(N,N-diphenylamino)triphenylamine (TDATA), has been achieved by co-evaporating the matrix HTL with tetrafluoro-tetracyano-quinodimethane (F_4TCNQ) molecules. Along with the ability to stack or combine electron- and hole-transporting materials to form multilayer structures via successive evaporation, doping has been shown to significantly improve small molecule light-emitting diode (LED) performance, such as better charge injection (leading to lower operating voltage), more efficient charge transport (due to improved conductivity) and increased power efficiency.
机译：开发高效光电器件的最重要的关键技术之一是能够通过具有明确定义的杂质含量的p型和n型掺杂来控制传输层的电性能。有机半导体中掺杂的基本原理与无机材料中的基本原理相同。可以添加具有适当电子性质的杂质，以将电子捐赠给最低的未占据分子轨道（LUMO）能级以进行n型掺杂，或从最高占据的分子轨道（HOMO）能级中去除电子以进行p型掺杂。小分子有机层的受控p掺杂，尤其是空穴传输层（HTL），例如钒基酞菁（VOPc），酞菁锌（ZnPC），N，N'-二苯基-N，N'-双（1-萘基）-1,1'-联苯-4,4'-二胺（α-NPD）和4,4'，4“-三（N，N-二苯氨基）三苯胺（TDATA）已通过共-用四氟-四氰基-喹二甲烷（F_4TCNQ）分子蒸发基质HTL。随着电子和空穴传输材料的堆叠或结合，通过连续蒸发形成多层结构的能力，掺杂已被证明可以显着改善小分子发光二极管（LED）的性能，例如更好的电荷注入（导致更低的工作电压），更有效的电荷传输（由于改善的电导率）和更高的功率效率。

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