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Comparative Study of Room-Temperature Ferromagnetism in Cu-Doped ZnO Nanowires Enhanced by Structural Inhomogeneity

机译:结构不均匀性增强的Cu掺杂ZnO纳米线中室温铁磁性的比较研究

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摘要

Diluted magnetic semiconductors (DMSs) represent a syner-getic collaboration between charge-based semiconductors and spin-based magnetism. Equipped with good structural, chemical, and electrical compatibilities with conventional semiconductors, DMSs are emerging as promising spin injection sources; a prerequisite for advancing spintronics. Following the success of (Ga, Mn)As, the discovery of many DMS materials with room-temperature ferromagnetism (RTFM) has generated a lot of interest because of both scientific and technological importance. Especially, theoretical studies predicted and experiments verified that some wide-band-gap oxide semiconductors, such as ZnO and TiO_2, doped with transitional metals, are DMSs. However, it is a general consensus that the experimental results on oxide-based DMSs are difficult to interpret owing to the low doping concentration and the poor conductivity, both disfavoring the carrier-based mechanisms. Furthermore, many experimental results were plagued by the precipitates of doped magnetic elements and even unintentional contaminations during sample handling.
机译:稀释的磁性半导体(DMS)代表了基于电荷的半导体与基于自旋的磁性之间的协同合作。 DMS具有与常规半导体良好的结构,化学和电气兼容性,因此它们正成为有前途的自旋注入源。推进自旋电子学的前提。随着(Ga,Mn)As的成功应用,由于科学和技术重要性,许多具有室温铁磁性(RTFM)的DMS材料的发现引起了人们的极大兴趣。特别是,理论研究预测和实验证明,某些过渡金属掺杂的宽带隙氧化物半导体(如ZnO和TiO_2)是DMS。然而,人们普遍认为,由于掺杂浓度低和电导率低,基于氧化物的DMS的实验结果难以解释,均不利于基于载流子的机理。此外,许多实验结果都受到掺杂的磁性元素的沉淀甚至样品处理过程中意外污染的困扰。

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