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首页> 外文期刊>Advanced Materials >Chemical Synthesis and Integration of Highly Conductive PdTe_2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers
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Chemical Synthesis and Integration of Highly Conductive PdTe_2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers

机译：具有低接触屏障的P型晶体管低维半导体的化学合成与高导电PDTE_2的集成

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摘要

Low-dimensional semiconductors provide promising ultrathin channels for constructing more-than-Moore devices. However, the prominent contact barriers at the semiconductor-metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p-type field-effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe2 with various low-dimensional semiconductors. The 2D PdTe2 synthesized through a quasi-liquid process exhibits high electrical conductivity (approximate to 4.3 x 10(6) S m(-1)) and thermal conductivity (approximate to 130 W m(-1) K-1), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe2 electrodes with desired geometry can be synthesized directly on 2D MoTe2 and other semiconductors to form high-performance p-type FETs without any further treatment. The chemically derived atomically ordered PdTe2-MoTe2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.
机译：低维半导体提供了用于构建更多比摩尔设备的绝缘通道。然而，半导体 - 金属电极接口界面的突出接触屏障极大地限制了所获得的装置的性能。这里，通过使用各种低维半导体的同时合成和集成来实现具有低接触屏障的P型场效应晶体管（FET）的化学方法。通过准液体工艺合成的2D PDTE2具有高导电性（近似为4.3×10（6）S m（-1））和导热率（近似为130W m（-1）K-1），优于其他过渡金属二甲基甲基化物（TMDC）甚至高于一些金属。另外，具有所需几何形状的PDTE2电极可以直接在2D Mote2和其他半导体上合成，以形成高性能P型FET而没有进一步处理。化学衍生的原子排序的PDTE2-MOTE2接口导致显着减小的接触屏障（65 Vs 240meV），从而增加所获得的装置的性能。这项工作展示了2D PDTE2作为接触材料的巨大潜力，并通过2D组件的化学结构和整合开辟了未来设备制造的新途径。

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  • 来源
    《Advanced Materials》 |2021年第27期|2101150.1-2101150.9|共9页
  • 作者

    Zheng Jingying; Miao Tingting; Xu Rui; Ping Xiaofan; Wu Yueyang; Lu Zhixing; Zhang Ziming; Hu Dake; Liu Lina; Zhang Qi; Li Dawei; Cheng Zhihai; Ma Weigang; Xie Liming; Jiao Liying;

  • 作者单位

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China|Fuzhou Univ Coll Mat Sci & Engn Fujian 350108 Peoples R China;

    China Univ Petr Beijing Key Lab Proc Fluid Filtrat & Separat Coll Mech & Transportat Engn Beijing 102249 Peoples R China;

    Renmin Univ China Dept Phys Beijing 100872 Peoples R China|Renmin Univ China Beijing Key Lab Optoelect Funct Mat & Micronano D Beijing 100872 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China|Fuzhou Univ Coll Chem Inst Opt Crystalline Mat Fuzhou 350108 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

    China Univ Petr Beijing Key Lab Proc Fluid Filtrat & Separat Coll Mech & Transportat Engn Beijing 102249 Peoples R China;

    Renmin Univ China Dept Phys Beijing 100872 Peoples R China|Renmin Univ China Beijing Key Lab Optoelect Funct Mat & Micronano D Beijing 100872 Peoples R China;

    Tsinghua Univ Dept Engn Mech Minist Educ Key Lab Thermal Sci & Power Engn Beijing 100084 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China;

    Tsinghua Univ Dept Chem Minist Educ Key Lab Organ Optoelect & Mol Engn Beijing 100084 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    2D crystals; chemical integration; field-effect transistors; PdTe; (2);

    机译：2D晶体;化学集成;场效应晶体管;PDTE;（2）;

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