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首页> 外文期刊>Advanced Materials >Assembly of Close-Packed Ferroelectric Polymer Nanowires via Interface-Epitaxy with ReS_2
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Assembly of Close-Packed Ferroelectric Polymer Nanowires via Interface-Epitaxy with ReS_2

机译：通过与RES_2的界面外延集成近包装的铁电聚合物纳米线

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摘要

The flexible, transparent, and low-weight nature of ferroelectric polymers makes them promising for wearable electronic and optical applications. To reach the full potential of the polarization-enabled device functionalities, large-scale fabrication of polymer thin films with well-controlled polar directions is called for, which remains a central challenge. The widely exploited Langmuir-Blodgett, spin-coating, and electrospinning methods only yield polymorphous or polycrystalline films, where the net polarization is compromised. Here, an easily scalable approach is reported to achieve poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) thin films composed of close-packed crystalline nanowires via interface-epitaxy with 1T '-ReS2. Upon controlled thermal treatment, uniform P(VDF-TrFE) films restructure into about 10 and 35 nm-wide (010)-oriented nanowires that are crystallographically aligned with the underlying ReS2, as revealed by high-resolution transmission electron microscopy. Piezoresponse force microscopy studies confirm the out-of-plane polar axis of the nanowire films and reveal coercive voltages as low as 0.1 V. Reversing the polarization can induce a conductance switching ratio of 10(8) in bilayer ReS2, over six orders of magnitude higher than that achieved by an untreated polymer gate. This study points to a cost-effective route to large-scale processing of high-performance ferroelectric polymer thin films for flexible energy-efficient nanoelectronics.
机译：铁电聚合物的柔性，透明和低重量性质使其承诺可穿戴电子和光学应用。为了达到能够偏振的装置功能的全部潜力，称为具有良好控制的极性方向的聚合物薄膜的大规模制造，这仍然是中央挑战。广泛利用的Langmuir-Blodgett，旋涂和静电纺丝方法仅产生多晶体或多晶膜，其中净偏振受到损害。这里，据报道，易于可扩展的方法，以通过界面外延在1T'-RES2实现由封闭填充的结晶纳米线组成的聚（偏二氟 - 三氟乙烯）p（VDF-TRFE）薄膜。在受控热处理时，均匀的P（VDF-TRFE）膜重组为约10和35nm宽（010）的纳米线，其与下面的RES2晶体地对准，如通过高分辨率透射电子显微镜透视所揭示的。压电响应力显微镜研究证实了纳米线薄膜的外平面极轴，并显示低至0.1V的矫顽率电压。反转偏振可以引起＆ 10（8）中的电导切换比例，超过六个订单比未处理的聚合物栅极的数量高。该研究指出了一种具有高性能铁电聚合物薄膜的大规模加工的成本效益，用于柔性节能纳米电子。

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  • 来源
    《Advanced Materials》 |2021年第27期|2100214.1-2100214.9|共9页
  • 作者

    Li Dawei; Sun Shuo; Wang Kun; Ahmadi Zahra; Shield Jeffrey E.; Ducharme Stephen; Hong Xia;

  • 作者单位

    Univ Nebraska Dept Phys & Astron Lincoln NE 68588 USA|Univ Nebraska Nebraska Ctr Mat & Nanosci Lincoln NE 68588 USA;

    Univ Nebraska Dept Phys & Astron Lincoln NE 68588 USA|Univ Nebraska Nebraska Ctr Mat & Nanosci Lincoln NE 68588 USA;

    Univ Nebraska Dept Phys & Astron Lincoln NE 68588 USA|Univ Nebraska Nebraska Ctr Mat & Nanosci Lincoln NE 68588 USA;

    Univ Nebraska Dept Mech & Mat Engn Lincoln NE 68588 USA;

    Univ Nebraska Dept Mech & Mat Engn Lincoln NE 68588 USA;

    Univ Nebraska Dept Phys & Astron Lincoln NE 68588 USA|Univ Nebraska Nebraska Ctr Mat & Nanosci Lincoln NE 68588 USA;

    Univ Nebraska Dept Phys & Astron Lincoln NE 68588 USA|Univ Nebraska Nebraska Ctr Mat & Nanosci Lincoln NE 68588 USA;

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  • 正文语种 eng
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  • 关键词

    interface epitaxy; van der Waals heterostructures; ReS; (2); ferroelectric polymers; crystalline nanowires;

    机译：界面外延;范德瓦尔斯异质结构;RE;（2）;铁电聚合物;结晶纳米线;

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