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首页> 外文期刊>Advanced Materials >Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly
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Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

机译：Ulthath Multibridge通道晶体管由van der Waals组件启用

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摘要

Multibridge channel field-effect transistors (MBCFETs) enable improved gate control and flow of a large drive current and they are regarded as promising candidates for next-generation transistor architecture. However, in achieving a larger drive current with a thinner channel, limitations arise from the decrease in mobility when the thickness of the Si nanosheet is less than 5 nm. In addition, an increase in the leakage current is unavoidable when a large number of channels are stacked. Here, a 2D ultrathin MBCFET is demonstrate, constructed based on 2 nm/2 nm MoS2 channels. The normalized drive current (23.11 mu A*mu m mu m(-1)) in each level channel of this MBCFET exceeds that of the latest seven-level-stacked Si MBCFET, while the leakage current is only 0.4% of this value, with the subthreshold swing reaching 60 mV dec(-1) and an on/off ratio reaching up to 4 x 10(8) at room temperature. Furthermore, the drive current of this 2D ultrathin MBCFET can be further increased by regulating the polarity of the operation voltage to reduce the injection barrier. The combination of 2D materials and an MBC structure has the potential for use in high-performance and low-power-consumption electronics.
机译：多纤维频道场效应晶体管（MBCFET）使得改进的栅极控制和大驱动电流的流动，并且它们被认为是下一代晶体管架构的有希望的候选者。然而，在实现具有更薄通道的较大驱动电流时，当Si NanoSheet的厚度小于5nm时，迁移率降低出现的限制。另外，当堆叠大量通道时，漏电流的增加是不可避免的。这里，基于2nm / 2nm MOS2通道构造的2D超薄MBCFET。该MBCFET的每个级别通道中的归一化驱动电流（23.11μA* mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu m mu mbcfet，而漏电流仅为该值的0.4％，亚阈值摆动达到60 mV DEC（-1），在室温下达到4×10（8）的开/关比。此外，通过调节操作电压的极性以减少注入屏障，可以进一步增加该2D超薄MBCFET的驱动电流。 2D材料和MBC结构的组合具有高性能和低功耗电子设备的可能性。

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  • 来源
    《Advanced Materials》 |2021年第37期|2102201.1-2102201.8|共8页
  • 作者

    Huang Xiaohe; Liu Chunsen; Zeng Senfeng; Tang Zhaowu; Wang Shuiyuan; Chen Xiaozhang; Zhang David Wei; Zhou Peng;

  • 作者单位

    Fudan Univ Sch Microelect State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Frontier Inst Chip & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Microelect State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Microelect State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Microelect State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Microelect State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Natl Integrated Circuit Innovat Ctr Shanghai 201203 Peoples R China;

    Fudan Univ Sch Microelect State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    2D materials; gate-all-around; multibridge channels; transistors;

    机译：2D材料;全面;多纤维通道;晶体管;

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