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首页> 外文期刊>Advanced Materials >Metallic Thin Films of TTF[Ni(dmit)_2]_2 by Electrodeposition on (001)-Oriented Silicon Substrates
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Metallic Thin Films of TTF[Ni(dmit)_2]_2 by Electrodeposition on (001)-Oriented Silicon Substrates

机译：（001）取向硅衬底上电沉积TTF [Ni（dmit）_2] _2的金属薄膜

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摘要

The preparation of thin films of crystalline molecular organic materials with specific physical properties (magnetic order, metallic behavior, superconductivity, etc.) is an active field boosted by the ever-increasing availability of remarkable new materials and their potential applications. Thin films grown by different methods (chemical and vapor-phase deposition, electrocrystallization, Langmuir-Blodgett techniques, etc.) based on highly conductive, magnetic, or semiconducting materials can be found in the literature. To our knowledge, only one example of thin films showing metallic transport properties down to liquid helium temperature has been reported, where bilayers of θ-(BET-TTF)_2Br·3H_2O (BET-TTF = bis(ethylenethio)tetrathiafulvalene) are grown on transparent polycarbonate substrates. The bilayers are prepared by dispersing BET-TTF molecules into the polymeric substrate and by exposure to bromine vapors. Room temperature conductivities, σ_(RT), as high as 120 S cm~(-1) have been measured for such films.
机译：具有特殊物理特性（磁序，金属行为，超导性等）的结晶分子有机材料薄膜的制备是一个活跃的领域，这是由于不断增加的非凡新材料及其潜在应用而推动的。在文献中可以找到以高导电，磁性或半导体材料为基础的通过不同方法（化学和气相沉积，电结晶，Langmuir-Blodgett技术等）生长的薄膜。据我们所知，仅报道了一个薄膜，该薄膜在低至液氦温度下显示出金属传输性能，在该薄膜上生长了双层θ-（BET-TTF）_2Br·3H_2O（BET-TTF =双（亚乙基硫代）四硫富瓦烯）。透明的聚碳酸酯基材。通过将BET-TTF分子分散到聚合物基质中并暴露在溴蒸气中来制备双层。对于此类薄膜，已测量出高达120 S cm〜（-1）的室温电导率σ_（RT）。

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