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首页> 外文期刊>Advanced Optical Materials >Fabrication of Pixelated Organic Light-Emitting Transistor (OLET) with a Pure Red-Emitting Organic Semiconductor
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Fabrication of Pixelated Organic Light-Emitting Transistor (OLET) with a Pure Red-Emitting Organic Semiconductor

机译:用纯红色有机半导体制造像素化有机发光晶体管(OLET)

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摘要

A pure red-emitting organic light-emitting transistor (OLET) is successfully fabricated using a pi-extended dicyanodistyrylbenzene-type organic semiconductor material (Hex-4-TFPTA), which shows outstanding charge transport and solid-state luminescence at the same time. Based on the structural (X-ray) and photophysical analyses, it is found that the appropriate molecular stacking and highly allowed S-1 -> S-0 transition of Hex-4-TFPTA created the ambidextrous balance between electrical mobility (mu(e, FET) approximate to 1 cm(2) V-1 s(-1)) and solid-state luminescent quantum yield, even in the deep-red (DR) region (phi(F) = 28%). Remarkably, the color purity of the red Hex-4-TFPTA thin film (0.70, 0.30) is close to the National Television System Committee (NTSC) standard primary red (0.67, 0.33) in Commission Internationale de I'Eclairage (CIE) color space. Moreover, in this work, micropixelated areal OLET emission is demonstrated for the first time by patterning the organic layer via a novel soft-lithographic technique called "patterned taping."
机译:使用pi扩展的二氰基二苯乙烯基苯型有机半导体材料(Hex-4-TFPTA)成功地制造了纯红色的有机发光晶体管(OLET),该材料同时显示出出色的电荷传输和固态发光。根据结构(X射线)和光物理分析,发现Hex-4-TFPTA的适当分子堆积和高度允许的S-1-> S-0跃迁在电迁移率(mu(e ,FET)大约1 cm(2)V-1 s(-1))和固态发光量子产率,即使在深红色(DR)区域(phi(F)= 28%)。值得注意的是,红色Hex-4-TFPTA薄膜(0.70,0.30)的色纯度接近国际照明委员会(CIE)颜色的国家电视系统委员会(NTSC)标准原色(0.67,0.33)。空间。此外,在这项工作中,通过称为“图案化编带”的新型软光刻技术对有机层进行构图,首次展示了微像素化的区域OLET发射。

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