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Controlled Cooling for Synthesis of Cs_2AgBiBr_6 Single Crystals and Its Application for X-Ray Detection

机译：Cs_2AgBiBr_6单晶合成的控制冷却及其在X射线检测中的应用

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摘要

Cs2AgBiBr6 double perovskite recently emerges as a promising semiconductor for ionization detections because of the low detection limit and nontoxic composition. However, it suffers from unsatisfactory reproducibility and wide fluctuation of electrical properties, as also in other halide perovskite systems. Here, solubility and supersolubility are employed as quantitative indicators to direct the growth of Cs2AgBiBr6 single crystals. The optimized Cs2AgBiBr6 crystals exhibit smooth surface as well as high resistivity with narrow distribution from 6.10 x 10(9) to 3.31 x 10(10) omega cm, in contrast to the unoptimized Cs2AgBiBr6 crystals ranging from 6.04 x 10(7) to 5.61 x 10(9) omega cm. Moreover, the fabricated X-ray detector has a sensitivity of 1974 mu C Gy(air)(-1) cm(-2) under 50 V mm(-1) electric field, which is close to lead halide perovskite detectors. This study highlights the importance of quantitative understanding about the growth process, and might also be applicable to other crystal growth methods, for instance, antisolvent or solvent evaporation method.
机译：Cs2AgBiBr6双钙钛矿由于其低检测限和无毒成分，最近成为有希望用于电离检测的半导体。但是，与其他卤化物钙钛矿体系一样，它的再现性和电性能的波动也很差。在这里，溶解度和超溶解度被用作指导Cs2AgBiBr6单晶生长的定量指标。经过优化的Cs2AgBiBr6晶体表现出光滑的表面以及高电阻率，分布范围从6.10 x 10（9）到3.31 x 10（10）Ω·cm，而未经优化的Cs2AgBiBr6晶体范围从6.04 x 10（7）到5.61 x 10（9）厘米。此外，制造的X射线探测器在50 V mm（-1）电场下的灵敏度为1974μC Gy（空气）（-1）cm（-2），接近于卤化钙钛矿铅探测器。这项研究强调了对生长过程进行定量了解的重要性，并且可能还适用于其他晶体生长方法，例如，抗溶剂或溶剂蒸发法。

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