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首页> 外文期刊>Advanced Optical Materials >Spontaneous Formation of Nanocrystals in Amorphous Matrix: Alternative Pathway to Bright Emission in Quasi-2D Perovskites
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Spontaneous Formation of Nanocrystals in Amorphous Matrix: Alternative Pathway to Bright Emission in Quasi-2D Perovskites

机译：非晶态基质中纳米晶体的自发形成：准2D钙钛矿中明亮发射的替代途径

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摘要

Significant enhancement of the light emission in Ruddlesden-Popper organic-inorganic halide perovskites is obtained by antisolvent induced spontaneous formation of nanocrystals in an amorphous matrix. This morphology change results in the passivation of defects and significant enhancement of light emission and 16 times higher photoluminescence quantum yield (PLQY), and it is applicable to different spacer cations. The use of trioctylphosphine oxide results in further defect passivation leading to an increase in PLQY (approximate to 2.3 times), the suppression of lower energy emission in low temperature photoluminescence spectra, the dominance of radiative recombination, and the disappearance of thermal quenching of the luminescence. The proposed method offers a reproducible, controllable, and antisolvent-insensitive alternative to energy landscape engineering to utilize energy funneling phenomenon to achieve bright emission. Instead of facilitating fast energy transfer from lower to higher number of perovskite sheets to prevent nonradiative losses, it is demonstrated that defects can be effectively passivated via morphology control and the use of a passivating agent, so that bright emission can be obtained from single phase nanocrystals embedded in amorphous matrix, resulting in light emitting diodes with a maximum external quantum efficiency of 2.25%.
机译：通过在非晶态基质中反溶剂诱导自发形成纳米晶体，可以显着增强Ruddlesden-Popper有机-无机卤化物钙钛矿中的发光。这种形态变化导致缺陷的钝化和光发射的显着增强，并且光致发光量子产率（PLQY）提高了16倍，并且适用于不同的间隔阳离子。使用三辛基氧化膦会导致进一步的缺陷钝化，从而导致PLQY升高（约2.3倍），抑制了低温光致发光光谱中较低的能量发射，辐射重组的优势以及发光的热猝灭消失。所提出的方法为能源景观工程提供了一种可重现，可控制且对溶剂不敏感的替代方法，以利用能量漏斗现象来实现明亮的发射。已经证明，可以通过形态控制和使用钝化剂有效地钝化缺陷，而不是促进从较低数量的钙钛矿薄片到较高数量的钙钛矿薄片的快速能量转移，从而可以从单相纳米晶体获得明亮的发射光。嵌入无定形矩阵中，导致发光二极管的最大外部量子效率为2.25％。

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