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Integration of MoS_2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near-Infrared Bands

机译:MoS_2与InAlAs / InGaAs异质结的集成,用于可见和近红外波段的双色检测

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At present, dual-channel or even multi-channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS2/InAlAs/InGaAs n-i-n heterojunction phototransistor by integrating multi-layered MoS2 with InGaAs-based high electron mobility transistors (InGaAs-HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 x 10(5) A W-1 under near-infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS2/InAlAs/InGaAs n-i-n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 x 10(5) A W-1 to -4 x 10(5) A W-1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS2/InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.
机译:目前,双通道甚至多通道记录是光电检测领域的发展趋势,已广泛应用于环境保护,安全,空间科学技术等领域。通过将多层MoS2与基于InGaAs的高电子迁移率晶体管(InGaAs-HEMT)集成在一起,提出了一种新颖的MoS2 / InAlAs / InGaAs n-i-n异质结光电晶体管。由于InGaAs通道中的内部光电流具有0.79 eV的窄能带隙,因此该器件在500 pW的1550 nm的近红外照明下显示出超过8 x 10(5)A W-1的高光响应性(R) 。此外,结合垂直MoS2 / InAlAs / InGaAs nin异质结中的光电导效应和横向光电晶体管中的光选通效应,该器件在可见光下具有独特的特性,即可以通过顶部栅电极从6调整其光响应性。 x 10(5)A W-1至-4 x 10(5)A W-1(通过栅极电压)。这可能会导致光控电子逆变器的新应用,需要进一步深入研究。该MoS2 / InAlAs / InGaAs光电晶体管在2D材料和常规三元复合半导体器件之间架起了一座新的桥梁。

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