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首页> 外文期刊>Advanced Optical Materials >Lateral Bilayer MoS_2–WS_2 Heterostructure Photodetectors with High Responsivity and Detectivity
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Lateral Bilayer MoS_2–WS_2 Heterostructure Photodetectors with High Responsivity and Detectivity

机译：具有高响应性和探测性的横向双层MoS_2–WS_2异质结构光电探测器

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摘要

2D heterostructures combining different layered semiconductors have received great interest due to their intriguing electrical and optical properties. However, the arbitrary growth of layers in a lateral heterostructure remains a challenge. Here, the synthesis of large-scale lateral bilayer (LBL) WS2-MoS2 heterostructures is reported by a two-step chemical vapor deposition route. Raman, photoluminescence, and second-harmonic generation images show the sharp boundaries between WS2 and MoS2 domains in the heterostructure. Atomically resolved scanning transmission electron microscopy further reveals that sharp boundaries are formed by seamless connections via a lateral zigzag epitaxy between WS2 and MoS2. Notably, the photodetector device based on the LBL WS2-MoS2 heterostructure exhibits ultrahigh photoresponsivity and detectivity (6.72 x 10(3) A W-1 and 3.09 x 10(13) Jones for 457 nm laser light, respectively), orders of magnitude higher than those of MoS2 and WS2 monocrystals. These excellent performances render LBL WS2-MoS2 heterostructures as promising candidates for next-generation optoelectronics.
机译：结合不同层状半导体的2D异质结构因其吸引人的电学和光学特性而引起了人们的极大兴趣。然而，横向异质结构中层的任意生长仍然是一个挑战。在这里，大规模的横向双层（LBL）WS2-MoS2异质结构的合成是通过两步化学气相沉积路线进行报道的。拉曼，光致发光和二次谐波生成图像显示了异质结构中WS2和MoS2域之间的清晰边界。原子分辨扫描透射电子显微镜进一步揭示了尖锐的边界是通过WS2和MoS2之间的横向之字形外延无缝连接形成的。值得注意的是，基于LBL WS2-MoS2异质结构的光电检测器器件具有超高的光响应性和检测性（对于457 nm激光分别为6.72 x 10（3）A W-1和3.09 x 10（13）Jones），数量级要高几个数量级。比MoS2和WS2单晶体这些出色的性能使LBL WS2-MoS2异质结构成为下一代光电子技术的有希望的候选者。

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