首页> 外文期刊>Advanced Optical Materials >Manipulation of Bi~(3+)/In~(3+) Transmutation and Mn~(2+)-Doping Effect on the Structure and Optical Properties of Double Perovskite Cs_2NaBi_(1-x)InxCl_6
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Manipulation of Bi~(3+)/In~(3+) Transmutation and Mn~(2+)-Doping Effect on the Structure and Optical Properties of Double Perovskite Cs_2NaBi_(1-x)InxCl_6

机译:双(3 +)/ In〜(3+)嬗变和Mn〜(2 +) - 对双钙钛矿CS_2NABI_(1-X)INXCL_6的结构和光学性质的掺杂效果

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摘要

The halide double perovskite family represented by A(2)(B+,B3+)X-6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic fields. Herein, the design and the experimental synthesis of a new family of Mn2+-doped Cs2NaBi1-xInxCl6 crystals with an intense orange-yellow emission band are reported, and the phase formation stability is discussed via a combined experimental-theoretical approach. Depending on the manipulation of Bi3+/In3+ combination, the band gap increases with In3+ content, and a subsequent evolution from indirect to direct band gap is verified. First-principles calculations and parity analyses indicate a parity forbidden effect on Cs2NaInCl6, and a combination effect of absorption on Cs2NaBi1-xInxCl6 from both Cs2NaBiCl6 and Cs2NaInCl6. The associated Mn2+-doped photoluminescence depending on the Bi3+/In3+ substitution is also addressed from the variation of the different Mn-Cl environment and neighboring-cation effect.
机译:由A(2)(B +,B3 +)X-6表示的卤化物双钙钛矿系列可以通过B / B站点的嬗变或异国情调的掺杂剂克服铅毒性,并使大型带隙工程能够满足光电领域的新兴应用。这里,报道了具有强烈橙黄色发射带的新型Mn2 +二掺杂CS2NaBi1-XinxCl6晶体的设计和实验合成,通过组合的实验理论方法讨论相位形成稳定性。根据Bi3 + / In3 +组合的操纵,带隙与IN3 +内容增加,并且验证了从间接到直接带隙的后续演进。第一原理计算和奇偶校验分析表明CS2NAINCL6对CS2NAINCL6的奇偶诊断效应,以及CS2NABI1-XINXCL6的吸收效果来自CS2NABICL6和CS2NAINCL6。根据Bi3 + / In3 +取代的相关MN2 + - 掺杂的光致发光也从不同MN-CL环境和相邻阳离子效应的变化寻址。

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  • 来源
    《Advanced Optical Materials》 |2019年第8期|1801435.1-1801435.9|共9页
  • 作者单位

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China;

    Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Flexible Memory Mat & Devices Shenzhen 518060 Peoples R China|Shenzhen Univ Coll Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China;

    Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Flexible Memory Mat & Devices Shenzhen 518060 Peoples R China;

    KSC SB RAS Fed Res Ctr Kirensky Inst Phys Lab Crystal Phys Krasnoyarsk 660036 Russia|Siberian Fed Univ Dept Engn Phys & Radioelect Krasnoyarsk 660041 Russia|Far Eastern State Transport Univ Dept Phys Khabarovsk 680021 Russia;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China;

    Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen Key Lab Flexible Memory Mat & Devices Shenzhen 518060 Peoples R China;

    Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing Municipal Key Lab New Energy Mat & Techno Beijing 100083 Peoples R China|South China Univ Technol State Key Lab Luminescent Mat Guangzhou 510641 Guangdong Peoples R China|South China Univ Technol Inst Opt Commun Mat Guangzhou 510641 Guangdong Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    band gap engineering; halide double perovskites; Mn2+ doping;

    机译:带隙工程;卤化物双重钙质;MN2 +掺杂;

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