Experimental verification of calculated IGBT losses in PFCs

Masserant B.; Stuart T.

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Experimental verification of calculated IGBT losses in PFCs

机译：对PFC中计算出的IGBT损耗进行实验验证

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Measurements of insulated gate bipolar transistor (IGBT) losses in modulated converters present a difficult challenge because of the wide variations in the waveform. As an alternative, earlier references (1994, 1995) provided a means of calculating these losses from out-of-circuit test data, but no experimental verification was presented. To provide this verification, this present study compares these calculated losses with measured losses obtained from the temperature rise of the heat sink of the IGBT. These experimental results agree quite well with the earlier loss calculations, and the largest deviation for four test cases is less than 4%

机译：由于波形变化很大，因此在调制转换器中测量绝缘栅双极型晶体管（IGBT）的损耗提出了一个难题。作为替代方案，较早的参考文献（1994，1995）提供了一种根据电路外测试数据计算这些损耗的方法，但没有进行实验验证。为了提供验证，本研究将这些计算得出的损耗与从IGBT散热器的温度上升获得的测量损耗进行了比较。这些实验结果与早期的损耗计算非常吻合，四个测试用例的最大偏差小于4％

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《IEEE Transactions on Aerospace and Electronic Systems》 |1996年第3期|p.1154-1158|共5页
作者
Masserant B.; Stuart T.;
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原文格式 PDF
正文语种 eng
中图分类航空;
关键词
heat sinks; insulated gate bipolar transistors; loss measurement; power factor correction; temperature measurement; IGBT losses; calculated losses; heat sink; insulated gate bipolar transistor; loss calculations; measured losses; modulated converters; out-of-circuit;

机译：散热器;绝缘栅双极晶体管;损耗测量;功率因数校正;温度测量;IGBT损耗;计算损耗;散热器;绝缘栅双极晶体管;损耗计算;测量损耗;调制转换器;电路外;

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专利

1. Experimental verification of calculated IGBT losses in PFCs [J] . Masserant B., Stuart T. IEEE Transactions on Aerospace and Electronic Systems . 1996,第3期

机译：对PFC中计算出的IGBT损耗进行实验验证
2. Computer simulation of IGBT losses in PFC circuits [J] . Stuart T.A., Shaoyan Ye IEEE Transactions on Aerospace and Electronic Systems . 1995,第3期

机译：PFC电路中IGBT损耗的计算机模拟
3. Computer simulation of IGBT losses in PFC circuits [J] . Stuart T.A., Shaoyan Ye IEEE Transactions on Aerospace and Electronic Systems . 1995,第3期

机译：PFC电路中IGBT损耗的计算机模拟
4. Simple Methods to Calculate IGBT and Diode Conduction and Switching Losses [C] . Gudrun Feix, Sibylle Dieckerhoff, Jost Allmeling, European Conference on Power Electronics and Applications . 2009

机译：简单的方法来计算IGBT和二极管传导和切换损耗
5. Comparison of the rate constants for energy transfer in the light-harvesting protein, C-phycocyanin, calculated from Forster's theory and experimentally measured by time-resolved fluorescence spectroscopy. [D] . Debreczeny, Martin Paul. 1994

机译：根据Forster的理论计算并通过时间分辨荧光光谱实验测量的光收集蛋白C-藻蓝蛋白中能量转移速率常数的比较。
6. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data [O] . Zhen Liu, Wenjuan Mei, Xianping Zeng, 2017

机译：基于新型Volterra k最近邻最优修剪极限学习机（VKOPP）模型的绝缘栅双极晶体管（IGBT）剩余寿命估算
7. A Universal Simulation Method to Calculate Power Losses of IGBTs and Anti-Parallel Diodes [O] . En Fang, Xiaojie Wu, Yuesen Yu, 2016

机译：一种计算IGBT和反平行二极管功率损耗的通用仿真方法
8. Horizontal Cold Source Friction Losses of D2 Model with Separate Tubes Comparison of Calculated Values to Experimental Results in D2. [R] . Hoffmann, H. 1989

机译：具有分离管的D2模型的水平冷源摩擦损失D2中实验结果的计算值比较。

Experimental verification of calculated IGBT losses in PFCs

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