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Synthesis of Graphene on Conducting Substrate by Electrochemical Deposition Method

机译：电化学沉积法在导电基底上合成石墨烯

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Investigation to optimize the synthesis process of graphene on conducting substrate is essential for many applications. In this investigation suitable approach to extract graphene thin film on a conductive ITO substrate is optimized. This optimization is carried out by electrochemical Reduction of Graphene Oxide (RGO) solution utilizing a repetitive cyclic potential against reference electrode. To do this, Silver chloride reference electrode is employed within a three electrode system at a potential range of (0 to -1.5) V. A number of four consecutive cycles is used to obtain a negative reduction peak. Yet more importantly the material's electrochemical properties were studied by Cyclic Voltammetry (CV) operation. From CV, it is clear that, the surface area with electrodeposition from ITO to RGO/ITO and RGO/RGO/ITO rates in a potential window of (2V) for (-1 to 1) V is improved. Moreover, Electrochemical Impedance Spectroscopy (EIS) showed reduced electrode surface internal resistance of the modified electrode that dramatic decreased in comparison from 96.33kΩ of RGO/ITO to 32Ω of RGO/RGO/ITO. In addition, Charge/Discharge Cycle (CDC) is obtained that showed relatively symmetrical charging property along with its corresponding discharge equivalents viewing rapid charging/discharging process that favors redox process for increased mobility and thus conductivity improvement. Moreover the modified electrode was studied for its physical characteristics using Scanning Electron Microscopy (SEM) that showed uniform reduced graphene sheets deposition with particles diameter ranging from 1.65µm to 635nm. Atomic Force Microscopy (AFM) was used in contact mode for a square area of 5 µm showing increased surface roughness from ITO of 2.773nm in comparison to Reduced Graphene Oxide/RGO/ITO 34.93nm. Results also proved that deposition of multiple layers of Graphene could strongly improve energy storage applications if implemented by allowing the material to hold greater charge in smaller area. This will lead to enhance the power densities far beyond existing electrochemical capacitors in a cost effective eco-friendly manner.
机译：对于许多应用而言，进行研究以优化石墨烯在导电基材上的合成工艺至关重要。在这项研究中，优化了在导电ITO基板上提取石墨烯薄膜的合适方法。通过利用相对于参比电极的重复循环电势对氧化石墨烯（RGO）溶液进行电化学还原来进行此优化。为此，在三电极系统中以（0至-1.5）V的电位范围使用氯化银参比电极。使用四个连续的循环以获得负的还原峰。更重要的是，通过循环伏安法（CV）操作研究了该材料的电化学性能。从CV可以明显看出，对于（-1至1）V，在（2V）的电势窗口中，从ITO到RGO / ITO的电沉积表面积和RGO / RGO / ITO比率得到了改善。此外，电化学阻抗谱（EIS）显示，与RGO / ITO的96.33kΩ到RGO / RGO / ITO的32Ω相比，改性电极的电极表面内电阻降低了，并且急剧降低。另外，获得快速充电/放电过程，该充电/放电循环（CDC）显示出相对对称的充电特性以及其相应的放电当量，快速充电/放电过程有利于氧化还原过程以增加迁移率并因此改善电导率。此外，使用扫描电子显微镜（SEM）研究了改性电极的物理特性，该电极显示出均匀的还原石墨烯片沉积，粒径范围为1.65µm至635nm。原子力显微镜（AFM）在接触模式下使用5平方微米的正方形区域，与减少的氧化石墨烯/ RGO / ITO的34.93nm相比，显示出2.773nm的ITO表面粗糙度增加。结果还证明，如果允许石墨烯在较小面积内保持更大电荷，则多层石墨烯的沉积可以大大改善储能应用。这将以经济有效的环保方式提高功率密度，使其远远超过现有的电化学电容器。

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