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首页> 外文期刊>American journal of engineering and applied sciences >Highly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin Films
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Highly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin Films

机译：来自不同多层薄膜的高效先进热电器件

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摘要

The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it all by the thermal conductivity. Thermoelectric devices were prepared using different multilayered thin film structures in the order of SiO_2/SiO_2 + Ge/Ge/Sb + Ge/Si/Si + Ge/Ge/Ge + Si by DC/RF Magnetron Sputtering. The prepared thermoelectric devices have been tailored with 5 MeV Si ions bombardment at the different fluences (doses) to form quantum structures in the multilayer thin films to improve the efficiency of the thermoelectric devices. Seebeck coefficients, van der Pauw-four probe resistivity, Hall Effect coefficient, density and mobility have been measured. After the samples were prepared, SEM/EDS data were collected. FIB/SEM images were provided to figure out the cross-section of the fabricated devices. Seebeck coefficients and electrical resistivity results were affected positively if the appropriate ion beam dose was selected.
机译：热电材料和设备的效率由无量纲的品质因数ZT表示。 ZT是通过将塞贝克系数乘以电导率和绝对温度的平方，然后将其全部除以热导率来计算的。使用不同的多层薄膜结构，通过DC / RF磁控溅射按SiO_2 / SiO_2 + Ge / Ge / Sb + Ge / Si / Si + Ge / Ge / Ge + Si的顺序制备热电器件。所制备的热电器件已通过在不同注量（剂量）处轰击5 MeV Si离子进行定制，以在多层薄膜中形成量子结构，从而提高了热电器件的效率。测量了塞贝克系数，范德堡四探针电阻率，霍尔效应系数，密度和迁移率。制备样品后，收集SEM / EDS数据。提供FIB / SEM图像以找出所制造设备的横截面。如果选择合适的离子束剂量，则塞贝克系数和电阻率结果会受到积极影响。

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