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首页> 外文期刊>Applied Computational Electromagnetics Society journal >Analysis and Design of Class E Power Amplifier with Finite DC-Feed Inductance and Series Inductance Network
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Analysis and Design of Class E Power Amplifier with Finite DC-Feed Inductance and Series Inductance Network

机译：具有有限直流馈电电感和串联电感网络的E类功率放大器的分析和设计

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摘要

With the increasing operation frequency, it is essential to take into account the parasitic parameters of transistor for high efficiency microwave power amplifier design. In this paper, a class E power amplifier with finite dc-feed inductance and series inductance network is analyzed including the parasitic inductance of transistor. The analytical design expressions are derived. And the effects of series inductance on the load network parameter are obtained. The results suggest that this new topology can be used in broadband power amplifiers design by making full use of transistor's output parasitic inductance. A GaN HEMIT power amplifier is designed with the proposed topology for validation purpose. Experimental results show that the amplifier can realize from 2.5 GHz to 3.5 GHz (33.3%) with measured drain efficiency larger than 60% and output power larger than 34 dBm. The measured performance shows good agreement with the theoretical performance predicted by the equations.
机译：随着工作频率的增加，对于高效微波功率放大器设计，必须考虑晶体管的寄生参数。本文分析了具有有限直流馈电电感和串联电感网络的E类功率放大器，其中包括晶体管的寄生电感。推导了分析设计表达式。并获得了串联电感对负荷网络参数的影响。结果表明，通过充分利用晶体管的输出寄生电感，该新拓扑可用于宽带功率放大器设计。 GaN HEMIT功率放大器的设计采用了建议的拓扑结构，以进行验证。实验结果表明，该放大器可实现2.5 GHz至3.5 GHz（33.3％）的频率，实测漏极效率大于60％，输出功率大于34 dBm。测量的性能与方程预测的理论性能显示出良好的一致性。

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