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Comparative Study of Analytical and Simulated Doubly-Supported RF MEMS Switches for Mechanical and Electrical Performance

机译:分析和模拟双支持RF MEMS开关在机械和电气性能方面的比较研究

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摘要

Radio Frequency Microeletromechanical System (RF MEMS) switches are useful for providing low-loss switching elements in high frequency devices. Since these devices contain a mechanical and an electrical component to their operation, predicting their performance is not trivial. Computational analysis can be extremely complicated due to the large number of variables that need to be incorporated. Using a multi-physics simulation tool seems like the only solution, but most simulators are optimized for only one engineering realm (i.e. mechanics or electronics). Combining different engineering realms into one simulated model will usually compromise the accuracy of the results. Often simulators cannot model a multi-realm device at all. This paper offers a solution to this problem by proposing a technique for combining computational analysis with simulation to determine the pull-down voltage and RF characteristics of an RF MEMS switch. Measurement results agree closely with the simulated results using this technique.
机译:射频微机电系统(RF MEMS)开关可用于在高频设备中提供低损耗开关元件。由于这些设备的操作包含机械和电气组件,因此预测其性能并非易事。由于需要合并大量变量,因此计算分析可能非常复杂。使用多物理场仿真工具似乎是唯一的解决方案,但是大多数仿真器仅针对一个工程领域(即机械或电子)进行了优化。将不同的工程领域组合到一个模拟模型中通常会损害结果的准确性。模拟器通常根本无法为多领域设备建模。本文提出了一种将计算分析与仿真结合起来以确定RF MEMS开关的下拉电压和RF特性的技术,从而提供了解决方案。使用该技术,测量结果与模拟结果非常吻合。

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