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首页> 外文期刊>Applied Mathematical Modelling >Simulation of the diffusion of point defects in structures with local elastic stresses
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Simulation of the diffusion of point defects in structures with local elastic stresses

机译：点缺陷在具有局部弹性应力的结构中的扩散模拟

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摘要

The stress-mediated diffusion of nonequilibrium point defects into the bulk of a semiconductor is investigated by computer simulation. It is assumed that the point defects are generated on the surface of a semiconductor and that in the course of diffusion they pass through the local region of elastic stresses because the average length of defect migration is greater than the thickness and depth of the strained layer. Within the strained layer, point defect segregation or heavy defect depletion occurs if defect drift under stresses is directed in or out of the layer, respectively. The calculations also show that, in contrast to the case of local defect sink, the local region of elastic stresses practically does not change the distribution of defects beyond this region if there is no generation/absorption of point defects within the strained layer.
机译：通过计算机仿真研究了应力介导的非平衡点缺陷向半导体本体的扩散。假定点缺陷在半导体的表面上产生，并且在扩散的过程中它们通过弹性应力的局部区域，因为缺陷迁移的平均长度大于应变层的厚度和深度。在应变层内，如果分别将应力下的缺陷漂移引导到该层中或从该层中导出，则会发生点缺陷偏析或严重的缺陷耗尽。计算还表明，与局部缺陷下陷的情况相反，如果应变层内没有点缺陷的产生/吸收，则弹性应力的局部区域实际上不会改变该区域之外的缺陷分布。

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