Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen 3-Doped GaAs

著录项

• 来源
  《_Applied Physics Express》 |2012年第11期|111201.1-111201.3|共3页
• 作者

  Kengo Takamiya; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi;

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• 作者单位

  Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

  Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

  Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

  Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

  Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

  Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

  Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

  Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan;

  Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan;

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

  Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

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• 正文语种 eng
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