Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers

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• 来源
  《Annales de l'I.H.P》 |2011年第2期|p.024102.1-024102.3|共3页
• 作者

  Hiroaki Hanafusa; Nobumitsu Hirose; Akifumi Kasamatsu; Takashi Mimura; Toshiaki Matsui; Harold M. H. Chong; Hiroshi Mizuta; Yoshiyuki Suda;

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• 作者单位

  Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

  National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;

  National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;

  National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;

  National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;

  School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.;

  School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.;

  Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

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• 正文语种 eng
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